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MT16VDDF12864HG-335 参数 Datasheet PDF下载

MT16VDDF12864HG-335图片预览
型号: MT16VDDF12864HG-335
PDF下载: 下载PDF文件 查看货源
内容描述: 小外形的DDR SDRAM DIMM [SMALL-OUTLINE DDR SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 31 页 / 552 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512MB, 1GB (x64)  
200-PIN DDR SODIMM  
Table 17: EEPROM Device Select Code  
Most significant bit (b7) is sent first.  
DEVICE TYPE IDENTIFIER  
CHIP ENABLE  
RW  
B0  
SELECT CODE  
b7  
b6  
b5  
b4  
b3  
b2  
b1  
Memory Area Select Code (two arrays)  
Protection Register Select Code  
1
0
0
1
1
1
0
0
SA2  
SA2  
SA1  
SA1  
SA0  
SA0  
RW  
RW  
Table 18: EEPROM Operating Modes  
MODE  
RW BIT  
WC  
BYTES INITIAL SEQUENCE  
1
0
1
1
0
0
VIH or VIL  
VIH or VIL  
VIH or VIL  
VIH or VIL  
VIL  
1
1
Current Address Read  
Random Address Read  
START, Device Select, RW = ‘1’  
START, Device Select, RW = ‘0’, Address  
reSTART, Device Select, RW = ‘1’  
Similar to Current or Random Address Read  
START, Device Select, RW = ‘0’  
1
O 1  
1
Sequential Read  
Byte Write  
VIL  
? 16  
Page Write  
START, Device Select, RW = ‘0’  
Figure 14: SPD EEPROM Timing Diagram  
t
t
t
F
HIGH  
R
t
LOW  
SCL  
t
t
t
t
t
SU:STO  
SU:STA  
HD:STA  
HD:DAT  
SU:DAT  
SDA IN  
t
t
t
DH  
AA  
BUF  
SDA OUT  
UNDEFINED  
09005aef80a646bc  
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2003 Micron Technology, Inc.  
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