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MT16VDDF12864HG-335 参数 Datasheet PDF下载

MT16VDDF12864HG-335图片预览
型号: MT16VDDF12864HG-335
PDF下载: 下载PDF文件 查看货源
内容描述: 小外形的DDR SDRAM DIMM [SMALL-OUTLINE DDR SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 31 页 / 552 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512MB, 1GB (x64)  
200-PIN DDR SODIMM  
Table 21: Serial Presence-Detect Matrix (Continued)  
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 29  
BYTE  
DESCRIPTION  
ENTRY (VERSION)  
MT16VDDF6464H MT16VDDF12864H  
94  
Variable Data  
Variable Data  
Variable Data  
Variable Data  
Week of Manufacture in BCD  
Module Serial Number  
95-98  
99-127  
Manufacturer-Specific Data (RSVD)  
NOTE:  
1. Device latencies used for SPD values.  
2. The value of tRAS used for -262/-26A/-265 modules is calculated from tRC - tRP. Actual device spec value is 40 ns.  
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is  
represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini-  
mum slew rate is met.  
09005aef80a646bc  
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2003 Micron Technology, Inc.  
29  
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