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MT16LSDT6464AI 参数 Datasheet PDF下载

MT16LSDT6464AI图片预览
型号: MT16LSDT6464AI
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块 [SYNCHRONOUS DRAM MODULE]
分类和应用: 动态存储器
文件页数/大小: 24 页 / 609 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB / 512MB (x64)
168-PIN SDRAM DIMMs
Diagram
Table 7:
BURST
LENGTH
Burst Definitions
STARTING
COLUMN
ADDRESS
ORDER OF ACCESSES WITHIN
A BURST
TYPE =
SEQUENTIAL
TYPE =
INTERLEAVED
0-1
1-0
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
Not Supported
2
4
8
Full
Page
(y)
NOTE:
A0
0
1
A1 A0
0
0
0
1
1
0
1
1
A2 A1 A0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
n= A0-A11/9/8
(location
0 - y)
0-1
1-0
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
Cn, Cn+1, Cn+2
Cn+3, Cn+4...
...Cn-1, Cn...
1. For full-page accesses: y = 1,024
2. For a burst length of two, A1–A9 select the block of
two burst; A0 selects the starting column within the
block.
3. For a burst length of four, A2–A9 select the block of
four burst; A0–A1 select the starting column within
the block.
4. For a burst length of eight, A3–A9 select the block
of eight burst; A0–A2 select the starting column
within the block.
5. For a full-page burst, the full row is selected and
A0–A9 select the starting column.
6. Whenever a boundary of the block is reached
within a given sequence above, the following
access wraps within the block.
7. For a burst length of one, A0–A9 select the unique
column to be accessed, and Mode Register bit M3 is
ignored. For a full-page burst, the full row is
selected and A0–A8 select the starting column.
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.