512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
Features
Table 2: Addressing
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
512MB
8K
8K A[12:0]
4 BA[1:0]
256Mb (32 Meg x 8)
1K A[9:0]
2 S#[1:0]
1GB
8K
16K A[13:0]
4 BA[1:0]
512Mb (64 Meg x 8)
1K A[9:0]
2 S#[1:0]
2GB
8K
16K A[13:0]
8 BA[2:0]
1Gb (128 Meg x 8)
1K A[9:0]
2 S#[1:0]
4GB
8K
32K A[14:0]
8 BA[2:0]
2Gb (256 Meg x 8)
1K A[9:0]
2 S#[1:0]
Table 3: Part Numbers and Timing Parameters – 512MB Modules (End of Life)
Base device: MT47H32M8,
1
256Mb DDR2 SDRAM
Module
Part Number
Density
Configuration
MT16HTF6464A(I)Y-667__
MT16HTF6464A(I)Y-53E__
MT16HTF6464A(I)Y-40E__
512MB
512MB
512MB
64 Meg x 64
64 Meg x 64
64 Meg x 64
Module
Bandwidth
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
5-5-5
4-4-4
3-3-3
Table 4: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H64M8,
1
512Mb DDR2 SDRAM
Module
Part Number
Density
Configuration
MT16HTF12864A(I)Y-80E__
MT16HTF12864A(I)Y-800__
MT16HTF12864A(I)Y-667__
MT16HTF12864A(I)Y-56E__
MT16HTF12864A(I)Y-40E__
1GB
1GB
1GB
1GB
1GB
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
PDF: 09005aef80f09084
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2003 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
