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MT16HTF25664AY-667E1 参数 Datasheet PDF下载

MT16HTF25664AY-667E1图片预览
型号: MT16HTF25664AY-667E1
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB , 1GB , 2GB , 4GB ( 64位, DR ) 240针DDR2 UDIMM [512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM]
分类和应用: 内存集成电路动态存储器双倍数据速率
文件页数/大小: 24 页 / 460 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM  
IDD Specifications  
Table 11: DDR2 IDD Specifications and Conditions – 512MB (Continued)  
Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8)  
component data sheet  
Parameter  
Symbol -667  
-53E  
-40E Units  
1880 mA  
1
Operating bank interleave read current: All device banks interleaving  
reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK  
(IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is  
HIGH between valid commands; Address bus inputs are stable during deselects;  
Data bus inputs are switching  
IDD7  
2040  
1960  
1. Value calculated as one module rank in this operating condition; all other module ranks  
in IDD2P (CKE LOW) mode.  
Notes:  
2. Value calculated reflects all module ranks in this operating condition.  
PDF: 09005aef80f09084  
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
13  
© 2003 Micron Technology, Inc. All rights reserved.