512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in the device data sheet are not implied. Exposure to
absolutemaximumratingconditionsforextendedperiodsmayadverselyaffectreliability.
Table 9: Absolute Maximum Ratings
Symbol
VDD/VDDQ
VIN, VOUT
II
Parameter
Min
–0.5
–0.5
–80
Max
2.3
2.3
80
Units
V
VDD/VDDQ supply voltage relative to VSS
Voltage on any pin relative to VSS
V
Address inputs, RAS#,
CAS#, WE#, BA
µA
Input leakage current; Any input 0V ≤ VIN ≤ VDD
VREF input 0V ≤ VIN ≤ 0.95V; (All other pins not
under test = 0V)
;
S#, CKE, ODT
CK0, CK0#
–40
–20
–30
–10
–10
40
20
30
10
10
CK1, CK1#, CK2, CK2#
DM
IOZ
DQ, DQS, DQS#
µA
Output leakage current; 0V ≤ VOUT; DQ and ODT
are disabled
IVREF
TA
VREF leakage current; VREF = valid VREF level
Module ambient operating temperature
–32
0
32
70
85
85
95
µA
°C
°C
°C
°C
Commercial
Industrial
–40
0
1
TC
DDR2 SDRAM component operating tempera-
ture2
Commercial
Industrial
–40
1. The refresh rate is required to double when TC exceeds 85°C.
Notes:
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
able on Micron’s Web site.
PDF: 09005aef80f09084
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
10
© 2003 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
