512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Features
Table 1:
Address Table
512MB
1GB
2GB
8K
8K (A0–A12)
4 (BA0, BA1)
1KB
8K
16K (A0–A13)
4 (BA0, BA1)
1KB
8K
Refresh count
16K (A0–A13)
8 (BA0, BA1, BA2)
1KB
Row addressing
Device bank addressing
Device page size per bank
Device configuration
Column addressing
256Mb (32 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
512Mb (64 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
1Gb (128 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
Module rank addressing
Table 2:
Key Timing Parameters
Data Rate (MT/s)
tRCD
(ns)
tRP
(ns)
tRC
(ns)
Speed Grade
CL = 3
CL = 4
CL = 5
-80E
-667
-53E
-40E
–
533
533
533
400
800
667
–
12.5
15
12.5
15
55
55
55
55
400
400
400
15
15
–
15
15
Table 3:
Part Numbers and Timing Parameters
Part Number1
Module
Density
Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Latency
(CL-tRCD-tRP)
512MB
512MB
512MB
1GB
64 Meg x 64
64 Meg x 64
64 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
5-5-5
4-4-4
3-3-3
5-5-5
5-5-5
4-4-4
3-3-3
5-5-5
5-5-5
4-4-4
3-3-3
MT16HTF6464AY-667__
MT16HTF6464AY-53E__
MT16HTF6464AY-40E__
MT16HTF12864AY-80E__
MT16HTF12864AY-667__
MT16HTF12864AY-53E__
MT16HTF12864AY-40E__
MT16HTF25664AY-80E__
MT16HTF25664AY-667__
MT16HTF25664AY-53E__
MT16HTF25664AY-40E__
1GB
1GB
1GB
2GB
2GB
2GB
2GB
Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT16HTF12864AY-80ED4.
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
2
MICRON [ MICRON TECHNOLOGY ]
