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MT16HTF25664A 参数 Datasheet PDF下载

MT16HTF25664A图片预览
型号: MT16HTF25664A
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR2 SDRAM Unbuffered DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 21 页 / 420 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT16HTF25664A的Datasheet PDF文件第12页浏览型号MT16HTF25664A的Datasheet PDF文件第13页浏览型号MT16HTF25664A的Datasheet PDF文件第14页浏览型号MT16HTF25664A的Datasheet PDF文件第15页浏览型号MT16HTF25664A的Datasheet PDF文件第17页浏览型号MT16HTF25664A的Datasheet PDF文件第18页浏览型号MT16HTF25664A的Datasheet PDF文件第19页浏览型号MT16HTF25664A的Datasheet PDF文件第20页  
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM  
Serial Presence-Detect  
Table 13: Serial Presence-Detect EEPROM DC Operating Conditions  
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V  
Parameter/Condition  
Symbol  
Min  
Max  
Units  
VDDSPD  
VIH  
VIL  
1.7  
3.6  
V
V
Supply voltage  
VDDSPD × 0.7  
VDDSPD + 0.5  
Input high voltage: Logic 1; All inputs  
Input low voltage: Logic 0; All inputs  
Output low voltage: IOUT = 3mA  
–0.6  
VDDSPD × 0.3  
V
VOL  
ILI  
0.4  
3
V
0.10  
0.05  
1.6  
0.4  
2
µA  
µA  
µA  
mA  
mA  
Input leakage current: VIN = GND to VDD  
Output leakage current: VOUT = GND to VDD  
Standby current:  
ILO  
3
ISB  
4
ICC  
1
Power supply current, READ: SCL clock frequency = 100 KHz  
Power supply current, WRITE: SCL clock frequency = 100 KHz  
R
ICC  
3
W
Table 14: Serial Presence-Detect EEPROM AC Operating Conditions  
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V  
Parameter/Condition  
Symbol  
Min  
Max  
Units  
Notes  
tAA  
tBUF  
0.2  
1.3  
200  
0.9  
µs  
µs  
1
SCL LOW to SDA data-out valid  
Time the bus must be free before a new transition can start  
Data-out hold time  
tDH  
ns  
tF  
300  
ns  
2
SDA and SCL fall time  
tHD:DAT  
tHD:STA  
tHIGH  
tI  
0
µs  
Data-in hold time  
0.6  
0.6  
µs  
Start condition hold time  
Clock HIGH period  
µs  
50  
ns  
Noise suppression time constant at SCL, SDA inputs  
Clock LOW period  
tLOW  
tR  
fSCL  
tSU:DAT  
tSU:STA  
tSU:STO  
tWRC  
1.3  
µs  
0.3  
400  
µs  
2
SDA and SCL rise time  
KHz  
ns  
SCL clock frequency  
100  
0.6  
0.6  
Data-in setup time  
µs  
3
4
Start condition setup time  
Stop condition setup time  
WRITE cycle time  
µs  
10  
ms  
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and  
the falling or rising edge of SDA.  
2. This parameter is sampled.  
3. For a restart condition, or following a WRITE cycle.  
4. The SPD EEPROM WRITE cycle time (tWRC) is the time from a valid stop condition of a write  
sequence to the end of the EEPROM internal erase/program cycle. During the WRITE cycle,  
the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resistor, and  
the EEPROM does not respond to its slave address.  
PDF: 09005aef80f09084/Source: 09005aef80f09068  
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2003 Micron Technology, Inc. All rights reserved.  
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