OBSOLETE
4, 8 MEG x 36
PARITY DRAM SIMMs
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (V
CC
= +5V
±10%)
AC CHARACTERISTICS
PARAMETER
Read command hold time (referenced to RAS#)
RAS# hold time
Write command to RAS# lead time
Transition time (rise or fall)
Write command hold time
Write command hold time (referenced to RAS#)
WE# command setup time
Write command pulse width
WE# hold time (CBR REFRESH)
WE# setup time (CBR REFRESH)
-6
SYMBOL
t
RRH
t
RSH
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WP
t
WRH
t
WRP
MIN
0
15
15
2
10
45
0
10
10
10
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
16
50
4, 8 Meg x 36 Parity DRAM SIMMs
DM45.pm5 – Rev. 3/97
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
„1997,
Micron Technology, Inc.