256Mb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Table 30: CE#-Controlled Write AC Characteristics
80ns
VCCQ = 1.65V
to VCC
60ns2
VCCQ = VCC
70ns
VCCQ = VCC
Parameter
Symbol
Unit Notes
Legacy
JEDEC
Min
Max
Min
Max
Min
Max
Address valid to next address
valid
tWC
tAVAV
65
–
75
–
85
–
ns
WE# LOW to CE# LOW
CE# LOW to CE# HIGH
tWS
tCP
tWLEL
tELEH
tDVEH
tEHDX
tEHWH
tEHEL
tAVEL
tELAX
tGHEL
0
35
45
0
–
–
–
–
–
–
–
–
–
0
35
45
0
–
–
–
–
–
–
–
–
–
0
35
45
0
–
–
–
–
–
–
–
–
–
ns
ns
Input valid to CE# HIGH
CE# HIGH to input transition
CE# HIGH to WE# HIGH
CE# HIGH to CE# LOW
tDS
tDH
tWH
tCPH
tAS
tAH
–
ns
ns
ns
ns
ns
ns
ns
2
0
0
0
30
0
30
0
30
0
Address valid to CE# LOW
CE# LOW to address transition
OE# HIGH to CE# LOW
45
0
45
0
45
0
1. The 60ns device is available upon customer request.
Notes:
2. The user's write timing must comply with this specification. Any violation of this write
timing specification may result in permanent damage to the NOR Flash device.
PDF: 09005aef84bd3b68
m29w_256mb.pdf - Rev. C 7/13 EN
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66
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