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M29W256GH70N3E 参数 Datasheet PDF下载

M29W256GH70N3E图片预览
型号: M29W256GH70N3E
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 76 页 / 992 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Registers  
2. Block nonvolatile protection bit: when cleared to 1, the block is unprotected; when set  
to 0, the block is protected.  
3. Block volatile protection bit: when cleared to 1, the block is unprotected; when set to 0,  
the block is protected.  
Figure 7: Lock Register Program Flowchart  
Start  
Enter LOCK REGISTER command set  
Address/data (unlock) cycle 1  
Address/data (unlock) cycle 2  
Address/data cycle 3  
PROGRAM LOCK REGISTER  
Address/data cycle 1  
Address/data cycle 2  
Polling algorithm  
Yes  
Done?  
No  
No  
DQ5 = 1  
Yes  
Success:  
Failure:  
EXIT PROTECTION command set  
(Returns to device read mode)  
Address/data cycle 1  
READ/RESET  
(Returns device to read mode)  
Address/data cycle 2  
1. Each lock register bit can be programmed only once.  
Notes:  
2. See the Block Protection Command Definitions table for address/data cycle details.  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. C 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.  
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