Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Table 43: Primary Vendor-Specific Extended Query (Sheet 2 of 2)
Offset(1)
P = 31h
Description
(Optional Flash Features and Commands)
Hex
Code
Length
Add.
Value
4
36:
37:
38:
39:
--CE
--00
--00
--00
Optional feature and command support (1=yes, 0=no)
Undefined bits are “0.” If bit 31 is
“1” then another 31 bit field of optional features follows at
the end of the bit-30 field.
bit 0 Chip erase supported
bit 0 = 0
No
Yes
Yes
Yes
No
bit 1 Suspend erase supported
bit 1 = 1
bit 2 = 1
(P+5)h
(P+6)h
(P+7)h
(P+8)h
bit 2 Suspend program supported
bit 3 Legacy lock/unlock supported
bit 4 Queued erase supported
bit 3 = 1
bit 4 = 0
bit 5 = 0
bit 6 = 1
bit 7 = 1
bit 8 = 0
bit 9 = 0
bit 30 = 0
bit 31 = 0
bit 5 Instant Individual block locking supported
bit 6 Protection bits supported
No
Yes
Yes
No
bit 7 Page-mode read supported
bit 8 Synchronous read supported
bit9 Simultaneous Operation Supported
bit 30 CFI Link(s) to follow (32, 64, 128 Mb)
bit 31 Another “Optional Feature” field to follow
No
No
No
Supported functions after suspend: read Array, Status, Query
Other supported operations are:
3A:
--01
(P+9)h
1
2
bits 1–7 reserved; undefined bits are “0”
bit 0 Program supported after erase suspend
Block Status Register mask
bit 0 = 1
3B:
3C:
bit 0 = 1
bit 1 = 0
Yes
--01
--00
bits 2–15 are Reserved; undefined bits are “0”
bit 0 Block Lock-Bit Status register active
bit 1 Block Lock-Down Bit Status active
(P+A)h
(P+B)h
Yes
No
VCC logic supply highest performance program/erase voltage
bits 0–3 BCD value in 100 mV
bits 4–7 BCD value in volts
(P+C)h
1
1
3D:
--33
--00
3.3 V
0.0 V
VPP optimum program/erase supply voltage
bits 0–3 BCD value in 100 mV
(P+D)h
3E:
bits 4–7 HEX value in volts
Note:
1.
Setting this bit, will lead to the extension of the CFI table.
Datasheet
62
Jan 2011
208032-03
MICRON [ MICRON TECHNOLOGY ]
