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JS28F512P30TF 参数 Datasheet PDF下载

JS28F512P30TF图片预览
型号: JS28F512P30TF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm  
Revision History  
Revision History  
Rev. B – 12/13  
• On cover page, corrected erase suspend (TYP) from 30μs to 25μs.  
• Updated part numbers  
• Added the following part number disclaimer: "Not all part numbers listed here are  
available for ordering."  
• Revised timings  
Rev. A – 8/13  
• Initial Micron brand release  
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900  
www.micron.com/productsupport Customer Comment Line: 800-932-4992  
Micron and the Micron logo are trademarks of Micron Technology, Inc.  
All other trademarks are the property of their respective owners.  
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.  
Although considered final, these specifications are subject to change, as further product development and data characterization some-  
times occur.  
PDF: 09005aef845667b3  
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
92  
© 2013 Micron Technology, Inc. All rights reserved.  
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