256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Write AC Characteristics
Table 30: WE#-Controlled Write AC Characteristics
Parameter
Symbol
Package
Min
Typ
Max Unit
Notes
Legacy
JEDEC
Address valid to next address valid
CE# LOW to WE# LOW
tWC
tAVAV
Fortified BGA
TSOP
100
110
0
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
tCS
tELWL
tWLWH
tDVWH
tWHDX
tWHEH
tWHWL
tAVWL
tWLAX
tGHWL
tWHGL
tWHRL
tVCHEL
tWHWH1
Fortified BGA
TSOP
–
–
0
–
–
WE# LOW to WE# HIGH
Input valid to WE# HIGH
WE# HIGH to input transition
WE# HIGH to CE# HIGH
WE# HIGH to WE# LOW
Address valid to WE# LOW
WE# LOW to address transition
OE# HIGH to WE# LOW
WE# HIGH to OE# LOW
Program/erase valid to RY/BY# LOW
VCC HIGH to CE# LOW
tWP
Fortified BGA
TSOP
35
35
30
30
0
–
–
–
–
tDS
Fortified BGA
TSOP
–
–
1
1
–
–
tDH
Fortified BGA
TSOP
–
–
0
–
–
tCH
Fortified BGA
TSOP
0
–
–
0
–
–
tWPH
tAS
Fortified BGA
TSOP
20
20
0
–
–
–
–
Fortified BGA
TSOP
–
–
0
–
–
tAH
Fortified BGA
TSOP
45
45
0
–
–
–
–
–
Fortified BGA
TSOP
–
–
0
–
–
tOEH
tBUSY
tVCS
tWHWH1
Fortified BGA
TSOP
0
–
–
0
–
–
Fortified BGA
TSOP
–
–
30
30
–
2
2
–
–
Fortified BGA
TSOP
300
300
–
–
–
–
WRITE TO BUFFER PROGRAM opera-
tion (512 words)
Fortified BGA
TSOP
900
900
210
210
–
–
–
PROGRAM operation (single word or
byte)
Fortified BGA
TSOP
–
–
–
–
1. The user's write timing must comply with this specification. Any violation of this write
timing specification may result in permanent damage to the NOR Flash device.
Notes:
2. Sampled only; not 100% tested.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
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62
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