256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Table 31: CE#-Controlled Write AC Characteristics
Parameter
Address valid to next address valid
WE# LOW to CE# LOW
Symbol
Package
Min
Typ
Max
Unit Notes
Legacy
JEDEC
tWC
tWS
tCP
tAVAV
Fortified BGA
TSOP
100
110
0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
tWLEL
tELEH
tDVEH
tEHDX
tEHWH
tEHEL
tAVEL
tELAX
tGHEL
Fortified BGA
TSOP
–
0
–
CE# LOW to CE# HIGH
Fortified BGA
TSOP
35
35
30
30
0
–
–
Input valid to CE# HIGH
CE# HIGH to input transition
CE# HIGH to WE# HIGH
CE# HIGH to CE# LOW
tDS
tDH
tWH
tCPH
tAS
tAH
–
Fortified BGA
TSOP
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
1
1
–
Fortified BGA
TSOP
–
0
–
Fortified BGA
TSOP
0
–
0
–
Fortified BGA
TSOP
20
20
0
–
–
Address valid to CE# LOW
CE# LOW to address transition
OE# HIGH to CE# LOW
Fortified BGA
TSOP
–
0
–
Fortified BGA
TSOP
45
45
0
–
–
Fortified BGA
TSOP
–
0
–
WRITE TO BUFFER PROGRAM opera-
tion (512 words)
tWHWH1 tWHWH1
Fortified BGA
TSOP
–
900
900
210
210
–
PROGRAM operation (single word or
byte)
Fortified BGA
TSOP
–
–
1. The user's write timing must comply with this specification. Any violation of this write
timing specification may result in permanent damage to the NOR Flash device.
Note:
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
65
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