256Mb and 512Mb (256Mb/256Mb), P30-65nm
Program and Erase Characteristics
Program and Erase Characteristics
Table 46: Program and Erase Specifications
VPPL
Typ
VPPH
Typ
Parameter
Symbol
Min
Max
Min
Max Unit Notes
Conventional Word Programming
Program
time
Single word
tPROG/W
–
270
456
–
270
456
µs
µs
1
1
Buffered Programming
Program
time
Aligned, BP time (32
words)
tPROG
–
–
–
–
–
310
310
375
505
900
716
900
–
–
–
–
–
310
310
375
505
900
716
900
Aligned, BP time (64
words)
Aligned, BP time (128
words)
1140
1690
3016
1140
1690
3016
Aligned, BP time (256
words)
One full buffer, BP time
(512 words)
Buffered Enhanced Factory Programming
Program
Single byte
BEFP Setup
tBEFP/B
tBEFP/SETUP
N/A
N/A
N/A
N/A
N/A
N/A
–
0.5
–
–
–
µs
1, 2
1
5
Erase and Suspend
Erase time 32KB parameter
128KB main
tERS/PB
tERS/MB
tSUSP/P
tSUSP/E
tERS/SUSP
–
–
–
–
–
0.8
0.8
25
4.0
4.0
30
30
–
–
–
–
–
–
0.8
0.8
25
4.0
4.0
30
30
–
s
1
Suspend la- Program suspend
µs
tency
Erase suspend
25
25
Erase-to-suspend
500
500
1, 3
Blank Check
Blank check Main array block
tBC/MB
–
3.2
–
–
3.2
–
ms
1. Typical values measured at TC = +25°C and nominal voltages. Performance numbers are
valid for all speed versions. Excludes system overhead. Sampled, but not 100% tested.
Notes:
2. Averaged over entire device.
3. tERS/SUSP is the typical time between an initial BLOCK ERASE or ERASE RESUME com-
mand and the a subsequent ERASE SUSPEND command. Violating the specification re-
peatedly during any particular block erase may cause erase failures.
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN
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