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JS28F256P30TFA 参数 Datasheet PDF下载

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型号: JS28F256P30TFA
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 95 页 / 1340 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Program Operation  
followed by a status check. SR.0 indicates when data from the buffer has been program-  
med into sequential flash memory array locations.  
Following the buffer-to-flash array programming sequence, the write state machine  
(WSM) increments internal addressing to automatically select the next 512-word array  
boundary. This aspect of BEFP saves host programming equipment the address bus set-  
up overhead.  
With adequate continuity testing, programming equipment can rely on the WSM’s in-  
ternal verification to ensure that the device has programmed properly. This eliminates  
the external post-program verification and its associated overhead.  
BEFP Requirements and Considerations  
Table 14: BEFP Requirements  
Parameter/Issue  
Case Temperature  
VCC  
Requirement  
Notes  
TC = 30°C ± 10 °C  
Nominal VCC  
VPP  
Driven to VPPH  
Setup and Confirm  
Programming  
Target block must be unlocked before issuing the BEFP Setup and Confirm commands.  
The first-word address (WA0) of the block to be programmed must be held constant  
from the setup phase through all data streaming into the target block, until transition  
to the exit phase is desired.  
Buffer Alignment  
WA0 must align with the start of an array buffer boundary.  
1
1. Word buffer boundaries in the array are determined by A[9:1] for Easy BGA and TSOP;  
A[8:0] for QUAD+ package (0x000 through 0x1FF). The alignment start point is A[9:1] =  
0x000 for Easy BGA and TSOP; A[8:0] = 0x000 for QUAD+ package.  
Note:  
Table 15: BEFP Considerations  
Parameter/Issue  
Requirement  
Notes  
Cycling  
For optimum performance, cycling must be limited below 50 erase cycles per block.  
1
2
Programming blocks BEFP programs one block at a time; all buffer data must fall within a single block.  
Suspend  
BEFP cannot be suspended.  
Programming the  
flash memory array  
Programming to the flash memory array can occur only when the buffer is full.  
3
1. Some degradation in performance may occur if this limit is exceeded, but the internal  
algorithm continues to work properly.  
Notes:  
2. If the internal address counter increments beyond the block's maximum address, ad-  
dressing wraps around to the beginning of the block.  
3. If the number of words is less than 512, remaining locations must be filled with 0xFFFF.  
BEFP Setup Phase  
After receiving the BEFP Setup and Confirm command sequence, Status Register bit SR.  
7 (Ready) is cleared, indicating that the WSM is busy with BEFP algorithm startup. A de-  
lay before checking SR.7 is required to allow the WSM enough time to perform all of its  
setups and checks (Block-Lock status, VPP level, etc.). If an error is detected, SR.4 is set  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.