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JS28F256P30TFA 参数 Datasheet PDF下载

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型号: JS28F256P30TFA
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 95 页 / 1340 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Device Command Bus Cycles  
Device Command Bus Cycles  
Device operations are initiated by writing specific device commands to the command  
user interface (CUI). Several commands are used to modify array data including Word  
Program and Block Erase commands. Writing either command to the CUI initiates a se-  
quence of internally timed functions that culminate in the completion of the requested  
task. However, the operation can be aborted by either asserting RST# or by issuing an  
appropriate suspend command.  
Table 11: Command Bus Cycles  
First Bus Cycle  
Second Bus Cycle  
Bus  
Cycles  
Mode  
Command  
Op  
Addr1  
DnA  
DnA  
DnA  
DnA  
DnA  
WA  
Data2  
Op  
Addr1  
Data2  
Read  
Read Array  
1
2  
2  
2
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
0xFF  
0x90  
0x98  
0x70  
0x50  
0x40  
0xE8  
0x80  
Read Device Identifier  
Read CFI  
Read  
DBA + IA  
ID  
Read DBA + CFI-A  
CFI-D  
SRD  
Read Status Register  
Clear Status Register  
Word Program  
Buffered Program3  
Read  
DnA  
1
Program  
2
Write  
Write  
Write  
WA  
WA  
WA  
WD  
N - 1  
0xD0  
>2  
>2  
WA  
Buffered Enhanced Factory  
Program (BEFP)4  
WA  
Erase  
Block Erase  
2
1
1
2
2
2
2
2
2
2
2
2
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
BA  
DnA  
DnA  
BA  
0x20  
0xB0  
0xD0  
0x60  
0x60  
0x60  
0x60  
0x60  
0x60  
0xC0  
0xC0  
0x60  
Write  
BA  
0xD0  
Suspend  
Program/Erase Suspend  
Program/Erase Resume  
Block Lock  
Block  
Locking/  
Unlocking  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
BA  
0x01  
0xD0  
0x2F  
0x01  
0xD0  
0x2F  
OTP-D  
LRD  
0x03  
Block Unlock  
BA  
BA  
Block Lock-down  
Block Lock  
BA  
BA  
Protection  
BA  
BA  
Block Unlock  
BA  
BA  
Block Lock-down  
Program OTP register  
Program Lock Register  
BA  
BA  
PRA  
LRA  
RCD  
OTP-RA  
LRA  
RCD  
Configuration Configure Read  
Configuration Register  
Block Blank Check  
Blank Check  
EFI  
2
Write  
Write  
BA  
0xBC  
0xEB  
Write  
Write  
BA  
D0  
Extended Function  
Interface command 5  
>2  
WA  
WA  
Sub-Op code  
1. First command cycle address should be the same as the operation’s target address. DBA  
= Device base address (needed for dual die 512Mb device); DnA = Address within the de-  
vice; IA = Identification code address offset; CFI-A = Read CFI address offset; WA = Word  
address of memory location to be written; BA = Address within the block; OTP-RA = Pro-  
tection register address; LRA = Lock register address; RCD = Read configuration register  
data on A[16:1] for Easy BGA and TSOP, A[15:0] for QUAD+ package.  
Notes:  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
28  
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