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JS28F256P30TFA 参数 Datasheet PDF下载

JS28F256P30TFA图片预览
型号: JS28F256P30TFA
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 95 页 / 1340 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Bus Operations  
Bus Operations  
CE# low and RST# high enable device read operations. The device internally decodes  
upper address inputs to determine the accessed block. ADV# low opens the internal ad-  
dress latches. OE# low activates the outputs and gates selected data onto the I/O bus.  
In asynchronous mode, the address is latched when ADV# goes high or continuously  
flows through if ADV# is held low. In synchronous mode, the address is latched by the  
first of either the rising ADV# edge or the next valid CLK edge with ADV# low (WE# and  
RST# must be VIH; CE# must be VIL).  
Bus cycles to/from the P30-65nm device conform to standard microprocessor bus oper-  
ations. The Bus Operations table shows the bus operations and the logic levels that  
must be applied to the device control signal inputs.  
Table 9: Bus Operations  
Bus Operation  
RST#  
VIH  
VIH  
VIH  
VIH  
VIH  
VIL  
CLK  
ADV#  
CE#  
L
OE#  
L
WE#  
H
WAIT  
Deasserted  
Driven  
DQ[15:0] Notes  
Read  
Asynchronous  
Synchronous  
Write  
X
L
L
Output  
Output  
Input  
1
Running  
L
L
H
X
X
X
X
L
L
H
L
High-Z  
1, 2  
1
Output Disable  
X
X
X
L
H
H
High-Z  
High-Z  
High-Z  
High-Z  
Standby  
Reset  
H
X
X
X
High-Z  
1
X
X
High-Z  
1, 3  
1. X = Don’t Care (H or L).  
Notes:  
2. Refer to the Command Bus Cycles table for valid DQ[15:0] during a write operation.  
3. RST# must be at VSS ± 0.2 V to meet the maximum specified power-down current.  
Reads  
Writes  
To perform a read operation, RST# and WE# must be deasserted while CE# and OE# are  
asserted. CE# is the device-select control. When asserted, it enables the flash memory  
device. OE# is the data-output control. When asserted, the addressed flash memory da-  
ta is driven onto the I/O bus.  
To perform a write operation, both CE# and WE# are asserted while RST# and OE# are  
deasserted. During a write operation, address and data are latched on the rising edge of  
WE# or CE#, whichever occurs first. The Command Bus Cycles table shows the bus cycle  
sequence for each of the supported device commands, while the Command Codes and  
Definitions table describes each command.  
Note: Write operations with invalid VCC and/or VPP voltages can produce spurious re-  
sults and should not be attempted.  
Output Disable  
When OE# is deasserted, device outputs DQ[15:0] are disabled and placed in a high-im-  
pedance (High-Z) state, WAIT is also placed in High-Z.  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.