P30-65nm SBC
Table 38: Burst Read Information
Offset
P=10Ah
Description
(Optional flash features and commands)
Hex
Code
Length
Add.
Value
Page Mode Read capability
bits 0-7 = “n” such that 2 HEX value represents the number
n
(P+1D)h
1
1
127:
128:
--04
--04
16 Byte
4
of read-page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates no
read page buffer.
Number of synchronous mode read configuration fields that
follow. 00h indicates no burst capability.
(P+1E)h
Synchronous mode read capability configuration 1
Bits 3-7 = Reserved
n+1
bits 0-2 “n” such that 2
HEX value represents the
maximum number of continuous synchronous reads when
the device is configured for its maximum word width. A value
of 07h indicates that the device is capable of continuous
linear bursts that will output data until the internal burst
counter reaches the end of the device’s burstable address
space. This field’s 3-bit value can be written directly to the
Read Configuration Register bits 0-2 if the device is
(P+1F)h
1
129:
--01
4
configured for its maximum word width. See offset 28h for
word width to determine the burst data output width.
(P+20)h
(P+21)h
(P+22)h
1
1
1
Synchronous mode read capability configuration 2
Synchronous mode read capability configuration 3
Synchronous mode read capability configuration 4
12A:
12B:
12C:
--02
--03
--07
8
16
Cont
Table 39: Partition and Erase Block Region Information
Offset(1)
P = 10Ah
Bottom Top
See table below
Address
Description
(Optional flash features and commands)
Bot
Top
Len
Number of device hardw are-partition regions w ithin the device.
x = 0: a single hardw are partition device (no fields follow ).
x specifies the number of device partition regions containing
one or more contiguous erase block regions.
1
12D:
12D:
(P+23)h (P+23)h
Datasheet
68
Apr 2010
Order Number: 208033-02
MICRON [ MICRON TECHNOLOGY ]
