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JS28F128P30TF75A 参数 Datasheet PDF下载

JS28F128P30TF75A图片预览
型号: JS28F128P30TF75A
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆Axcell P30-65nm闪存 [Numonyx Axcell P30-65nm Flash Memory]
分类和应用: 闪存
文件页数/大小: 90 页 / 1194 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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P30-65nm SBC  
Table 34: System Interface Information  
Hex  
Code  
Offset Length  
Description  
Add  
Value  
VCC logic supply minimum program/erase voltage  
bits 0-3 BCD 100 mV  
1Bh  
1Ch  
1
1
1B:  
--17  
1.7V  
bits 4-7 BCD volts  
VCC logic supply maximum program/erase voltage  
bits 0-3 BCD 100 mV  
bits 4-7 BCD volts  
1C:  
1D:  
1E:  
--20  
--85  
--95  
2.0V  
8.5V  
9.5V  
VPP [programming] supply minimum program/erase voltage  
bits 0-3 BCD 100 mV  
bits 4-7 HEX volts  
1Dh  
1Eh  
1
1
VPP [programming] supply maximum program/erase voltage  
bits 0-3 BCD 100 mV  
bits 4-7 HEX volts  
n
1Fh  
20h  
21h  
22h  
1
1
1
1
“n” such that typical single word program time-out = 2 µ-sec  
1F:  
20:  
21:  
22:  
--06  
--09  
--09  
--00  
64µs  
512µs  
0.5s  
n
“n” such that typical full buffer write time-out = 2 µ-sec  
n
“n” such that typical block erase time-out = 2 m-sec  
n
“n” such that typical full chip erase time-out = 2 m-sec  
NA  
n
“n” such that maximum word program time-out = 2 times  
23h  
24h  
1
1
23:  
24:  
--02  
--02  
256µs  
typical  
n
“n” such that maximum buffer write time-out = 2 times  
2048µs  
typical  
n
“n” such that maximum block erase time-out = 2 times  
typical  
25h  
26h  
1
1
25:  
26:  
--03  
--00  
4s  
n
“n” such that maximum chip erase time-out = 2 times typical  
NA  
Datasheet  
64  
Apr 2010  
Order Number: 208033-02  
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