P30-65nm SBC
15.5
Program and Erase Characteristics
Table 27: Program and Erase Specifications
V
V
PPH
PPL
Num
Symbol
Parameter
Unit
Notes
Min
Conventional Word Programming
Single word 40
Buffered Programming
Typ
Max
Min
Typ
Max
Program
Time
W200
t
t
-
175
-
40
175
µs
1
PROG/W
Aligned 16-Wd, BP time
(32 Byte)
-
-
-
70
85
200
200
-
-
-
70
85
200
200
800
Program
Time
Aligned 32-Wd, BP time
(64 Byte)
W250
µs
µs
1
PROG/Buffer
one full buffer (256
Words)
284
1280
160
Buffered Enhanced Factory Programming
W451
W452
t
t
Single byte
BEFP Setup
n/a
n/a
n/a
n/a
n/a
n/a
-
0.31
-
-
-
1,2
1
BEFP/B
Program
10
BEFP/Setup
Erase and Suspend
128-KByte Array Block
-
-
0.5
0.4
4
0.5
0.4
4
W501
t
Erase Time
s
ERS/B
32-KByte Parameter
Block
2.5
-
2.5
1
W600
W601
W602
t
t
t
Program suspend
Erase suspend
-
-
-
20
20
25
25
-
-
-
-
20
20
25
25
-
SUSP/P
Suspend
Latency
µs
SUSP/E
Erase to Suspend
500
500
1,3
ERS/SUSP
Blank Check
-
blank
check
W702
t
Array Block
3.2
-
-
3.2
-
ms
BC/AB
Notes:
1.
Typical values measured at T = +25°C and nominal voltages. Performance numbers are valid for all speed versions.
C
Excludes system overhead. Sampled, but not 100% tested.
2.
3.
Averaged over entire device.
W602 is the typical time between an initial block erase or erase resume command and the a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.
Datasheet
58
Apr 2010
Order Number: 208033-02
MICRON [ MICRON TECHNOLOGY ]
