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JS28F128P30TF75A 参数 Datasheet PDF下载

JS28F128P30TF75A图片预览
型号: JS28F128P30TF75A
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆Axcell P30-65nm闪存 [Numonyx Axcell P30-65nm Flash Memory]
分类和应用: 闪存
文件页数/大小: 90 页 / 1194 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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P30-65nm SBC  
15.5  
Program and Erase Characteristics  
Table 27: Program and Erase Specifications  
V
V
PPH  
PPL  
Num  
Symbol  
Parameter  
Unit  
Notes  
Min  
Conventional Word Programming  
Single word 40  
Buffered Programming  
Typ  
Max  
Min  
Typ  
Max  
Program  
Time  
W200  
t
t
-
175  
-
40  
175  
µs  
1
PROG/W  
Aligned 16-Wd, BP time  
(32 Byte)  
-
-
-
70  
85  
200  
200  
-
-
-
70  
85  
200  
200  
800  
Program  
Time  
Aligned 32-Wd, BP time  
(64 Byte)  
W250  
µs  
µs  
1
PROG/Buffer  
one full buffer (256  
Words)  
284  
1280  
160  
Buffered Enhanced Factory Programming  
W451  
W452  
t
t
Single byte  
BEFP Setup  
n/a  
n/a  
n/a  
n/a  
n/a  
n/a  
-
0.31  
-
-
-
1,2  
1
BEFP/B  
Program  
10  
BEFP/Setup  
Erase and Suspend  
128-KByte Array Block  
-
-
0.5  
0.4  
4
0.5  
0.4  
4
W501  
t
Erase Time  
s
ERS/B  
32-KByte Parameter  
Block  
2.5  
-
2.5  
1
W600  
W601  
W602  
t
t
t
Program suspend  
Erase suspend  
-
-
-
20  
20  
25  
25  
-
-
-
-
20  
20  
25  
25  
-
SUSP/P  
Suspend  
Latency  
µs  
SUSP/E  
Erase to Suspend  
500  
500  
1,3  
ERS/SUSP  
Blank Check  
-
blank  
check  
W702  
t
Array Block  
3.2  
-
-
3.2  
-
ms  
BC/AB  
Notes:  
1.  
Typical values measured at T = +25°C and nominal voltages. Performance numbers are valid for all speed versions.  
C
Excludes system overhead. Sampled, but not 100% tested.  
2.  
3.  
Averaged over entire device.  
W602 is the typical time between an initial block erase or erase resume command and the a subsequent erase suspend  
command. Violating the specification repeatedly during any particular block erase may cause erase failures.  
Datasheet  
58  
Apr 2010  
Order Number: 208033-02