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SST39SF040-70-4C-NHE 参数 Datasheet PDF下载

SST39SF040-70-4C-NHE图片预览
型号: SST39SF040-70-4C-NHE
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位/ 2兆位/ 4兆位( X8 )多用途闪存 [1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash]
分类和应用: 闪存
文件页数/大小: 28 页 / 273 K
品牌: MICROCHIP [ MICROCHIP ]
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash  
SST39SF010A / SST39SF020A / SST39SF040  
Data Sheet  
Product Description  
The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s propri-  
etary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tun-  
neling injector attain better reliability and manufacturability compared with alternate approaches. The  
SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The  
SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.  
Featuring high performance Byte-Program, the SST39SF010A/020A/040 devices provide a maximum  
Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the comple-  
tion of Program operation. To protect against inadvertent write, they have on-chip hardware and Soft-  
ware Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of  
applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data  
retention is rated at greater than 100 years.  
The SST39SF010A/020A/040 devices are suited for applications that require convenient and econom-  
ical updating of program, configuration, or data memory. For all system applications, they significantly  
improve performance and reliability, while lowering power consumption. They inherently use less  
energy during erase and program than alternative flash technologies. The total energy consumed is a  
function of the applied voltage, current, and time of application. Since for any given voltage range, the  
SuperFlash technology uses less current to program and has a shorter erase time, the total energy  
consumed during any Erase or Program operation is less than alternative flash technologies. These  
devices also improve flexibility while lowering the cost for program, data, and configuration storage  
applications.  
The SuperFlash technology provides fixed Erase and Program times, independent of the number of  
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have  
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-  
gram times increase with accumulated Erase/Program cycles.  
To meet high density, surface mount requirements, the SST39SF010A/020A/040 are offered in 32-lead  
PLCC and 32-lead TSOP packages. A 600 mil, 32-pin PDIP is also available. See Figures 2, 3, and 4  
for pin assignments.  
©2013 Silicon Storage Technology, Inc.  
DS25022B  
04/13  
2
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