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PIC18F2450-I/SO 参数 Datasheet PDF下载

PIC18F2450-I/SO图片预览
型号: PIC18F2450-I/SO
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚,高性能, 12 MIPS ,增强型闪存, USB微控制器采用纳瓦技术 [28/40/44-Pin, High-Performance, 12 MIPS, Enhanced Flash, USB Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 320 页 / 5591 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2450/4450  
The long write is necessary for programming the  
internal Flash. Instruction execution is halted while in a  
long write cycle. The long write will be terminated by  
the internal programming timer.  
6.5  
Writing to Flash Program Memory  
The minimum programming block is 8 words or  
16 bytes. Word or byte programming is not supported.  
Table writes are used internally to load the holding  
registers needed to program the Flash memory. There  
are 16 holding registers used by the table writes for  
programming.  
The write/erase voltages are generated by an on-chip  
charge pump, rated to operate over the voltage range  
of the device.  
Note:  
The default value of the holding registers on  
device Resets and after write operations is  
FFh. A write of FFh to a holding register  
does not modify that byte. This means that  
individual bytes of program memory may be  
modified, provided that the change does not  
attempt to change any bit from a ‘0’ to a ‘1’.  
When modifying individual bytes, it is not  
necessary to load all 16 holding registers  
before executing a write operation.  
Since the Table Latch (TABLAT) is only a single byte, the  
TBLWTinstruction may need to be executed 16 times for  
each programming operation. All of the table write oper-  
ations will essentially be short writes because only the  
holding registers are written. At the end of updating the  
16 holding registers, the EECON1 register must be  
written to in order to start the programming operation  
with a long write.  
FIGURE 6-5:  
TABLE WRITES TO FLASH PROGRAM MEMORY  
TABLAT  
Write Register  
8
8
8
8
TBLPTR = xxxxx0  
TBLPTR = xxxxx1  
TBLPTR = xxxxx2  
TBLPTR = xxxxxF  
Holding Register  
Holding Register  
Holding Register  
Holding Register  
Program Memory  
10. Write 0AAh to EECON2.  
6.5.1  
FLASH PROGRAM MEMORY WRITE  
SEQUENCE  
11. Set the WR bit. This will begin the write cycle.  
12. The CPU will stall for duration of the write (about  
2 ms using internal timer).  
The sequence of events for programming an internal  
program memory location should be:  
13. Re-enable interrupts.  
1. Read 64 bytes into RAM.  
14. Repeat steps 6 through 14 once more to write  
64 bytes.  
2. Update data values in RAM as necessary.  
3. Load Table Pointer register with address being  
erased.  
15. Verify the memory (table read).  
This procedure will require about 8 ms to update one  
row of 64 bytes of memory. An example of the required  
code is given in Example 6-3.  
4. Execute the Row Erase procedure.  
5. Load Table Pointer register with address of first  
byte being written.  
Note:  
Before setting the WR bit, the Table  
Pointer address needs to be within the  
intended address range of the 16 bytes in  
the holding register.  
6. Write 16 bytes into the holding registers with  
auto-increment.  
7. Set the EECON1 register for the write operation:  
• clear the CFGS bit to access program memory;  
• set WREN to enable byte writes.  
8. Disable interrupts.  
9. Write 55h to EECON2.  
© 2006 Microchip Technology Inc.  
Advance Information  
DS39760A-page 79