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PIC18F2450-I/SO 参数 Datasheet PDF下载

PIC18F2450-I/SO图片预览
型号: PIC18F2450-I/SO
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚,高性能, 12 MIPS ,增强型闪存, USB微控制器采用纳瓦技术 [28/40/44-Pin, High-Performance, 12 MIPS, Enhanced Flash, USB Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 320 页 / 5591 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2450/4450  
21.2 DC Characteristics: Power-Down and Supply Current  
PIC18F2450/4450 (Industrial)  
PIC18LF2450/4450 (Industrial) (Continued)  
PIC18LF2450/4450  
Standard Operating Conditions (unless otherwise stated)  
(Industrial)  
Operating temperature  
-40°C TA +85°C for industrial  
PIC18F2450/4450  
Standard Operating Conditions (unless otherwise stated)  
(Industrial)  
Operating temperature  
Typ Max Units  
-40°C TA +85°C for industrial  
Param  
No.  
Device  
Supply Current (IDD)  
Conditions  
(2)  
PIC18LF2450/4450 250  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
μA  
μA  
μA  
μA  
μA  
-40°C  
250  
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
VDD = 2.0V  
250  
PIC18LF2450/4450 550  
FOSC = 1 MHZ  
(PRI_RUN,  
EC oscillator)  
480  
VDD = 3.0V  
VDD = 5.0V  
VDD = 2.0V  
VDD = 3.0V  
VDD = 5.0V  
VDD = 4.2V  
VDD = 5.0V  
VDD = 4.2V  
VDD = 5.0V  
460  
μA  
All devices 1.2  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
1.1  
1.0  
PIC18LF2450/4450 0.74 TBD  
0.74 TBD  
0.74 TBD  
PIC18LF2450/4450 1.3  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
FOSC = 4 MHz  
(PRI_RUN,  
EC oscillator)  
1.3  
1.3  
All devices 2.7  
2.6  
2.5  
All devices 15  
16  
FOSC = 40 MHZ  
(PRI_RUN,  
EC oscillator)  
16  
All devices 21  
21  
21  
All devices 20  
20  
FOSC = 48 MHZ  
(PRI_RUN,  
EC oscillator)  
20  
All devices 25  
25  
25  
Legend: TBD = To Be Determined. Shading of rows is to assist in readability of the table.  
Note 1: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured  
with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD or VSS and all features that  
add delta current disabled (such as WDT, Timer1 Oscillator, BOR, etc.).  
2: The supply current is mainly a function of operating voltage, frequency and mode. Other factors, such as I/O pin  
loading and switching rate, oscillator type and circuit, internal code execution pattern and temperature, also have  
an impact on the current consumption.  
The test conditions for all IDD measurements in active operation mode are:  
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD or VSS;  
MCLR = VDD; WDT enabled/disabled as specified.  
3: Standard low-cost 32 kHz crystals have an operating temperature range of -10°C to +70°C. Extended  
temperature crystals are available at a much higher cost.  
4: BOR and HLVD enable internal band gap reference. With both modules enabled, current consumption will be  
less than the sum of both specifications.  
© 2006 Microchip Technology Inc.  
Advance Information  
DS39760A-page 271  
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