PIC18FXX20
TABLE 26-4: MEMORY PROGRAMMING REQUIREMENTS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
DC Characteristics
Param
Sym
No.
Characteristic
Min
Typ†
Max Units
Conditions
Internal Program Memory
Programming Specifications
(Note 1)
VPP
IPP
9.00
—
—
—
—
13.25
5
V
(Note 2)
D110
D112
D113
Voltage on MCLR/VPP pin
Current into MCLR/VPP pin
µA
mA
IDDP
—
10
Supply Current during
Programming
Data EEPROM Memory
Cell Endurance
Cell Endurance
1M
100K
—
—
—
D120
D120A ED
ED
100K
10K
VMIN
E/W -40°C to +85°C
E/W +85°C to +125°C
D121 VDRW VDD for Read/Write
5.5
V
Using EECON to read/write
VMIN = Minimum operating
voltage
—
40
—
—
—
D122 TDEW Erase/Write Cycle Time
D123 TRETD Characteristic Retention
D123A TRETD Characteristic Retention
Program FLASH Memory
4
—
—
ms
Year -40°C to +85°C (Note 3)
Year 25°C (Note 3)
100
—
—
D130
D130A EP
D131
D132
EP
Cell Endurance
Cell Endurance
VDD for Read
10K
1000
VMIN
100K
10K
—
E/W -40°C to +85°C
E/W +85°C to +125°C
VPR
VIE
5.5
V
VMIN = Minimum operating
voltage
—
—
VDD for Block Erase
VDD for Externally Timed Erase
or Write
4.5
4.5
5.5
5.5
V
V
Using ICSP port
Using ICSP port
D132A VIW
—
D132B VPEW VDD for Self-timed Write
VMIN
5.5
V
VMIN = Minimum operating
voltage
—
1
—
—
D133
D133A TIW
TIE
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
5
—
ms VDD > 4.5V
ms VDD > 4.5V
—
40
—
—
—
D133A TIW
D134 TRETD Characteristic Retention
D134A TRETD Characteristic Retention
Self-timed Write Cycle Time
2.5
—
—
ms
Year -40°C to +85°C (Note 3)
Year 25°C (Note 3)
100
†
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of Table Write
instructions.
2: The pin may be kept in this range at times other than programming, but it is not recommended.
3: Retention time is valid, provided no other specifications are violated.
2003 Microchip Technology Inc.
Advance Information
DS39609A-page 319
MICROCHIP [ MICROCHIP ]
