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PIC18F8621-I/PT 参数 Datasheet PDF下载

PIC18F8621-I/PT图片预览
型号: PIC18F8621-I/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 八十〇分之六十四引脚高性能, 64 KB的增强型闪存微控制器与A / D [64/80-Pin High-Performance, 64-Kbyte Enhanced Flash Microcontrollers with A/D]
分类和应用: 闪存微控制器和处理器外围集成电路装置时钟
文件页数/大小: 396 页 / 6639 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F6525/6621/8525/8621  
the holding registers are written. At the end of updating  
8 registers, the EECON1 register must be written to, to  
start the programming operation with a long write.  
5.5  
Writing to Flash Program Memory  
The minimum programming block is 4 words or 8 bytes.  
Word or byte programming is not supported.  
The long write is necessary for programming the  
internal Flash. Instruction execution is halted while in a  
long write cycle. The long write will be terminated by  
the internal programming timer.  
Table writes are used internally to load the holding  
registers needed to program the Flash memory. There  
are 8 holding registers used by the table writes for  
programming.  
The EEPROM on-chip timer controls the write time.  
The write/erase voltages are generated by an on-chip  
charge pump, rated to operate over the voltage range  
of the device for byte or word operations.  
Since the Table Latch (TABLAT) is only a single byte,  
the TBLWT instruction has to be executed 8 times for  
each programming operation. All of the table write  
operations will essentially be short writes because only  
FIGURE 5-5:  
TABLE WRITES TO FLASH PROGRAM MEMORY  
TABLAT  
Write Register  
8
8
8
8
TBLPTR = xxxxx0  
TBLPTR = xxxxx2  
TBLPTR = xxxxx7  
Holding Register  
TBLPTR = xxxxx1  
Holding Register  
Holding Register  
Holding Register  
Program Memory  
8. Disable interrupts.  
5.5.1  
FLASH PROGRAM MEMORY WRITE  
SEQUENCE  
9. Write 55h to EECON2.  
10. Write AAh to EECON2.  
The sequence of events for programming an internal  
program memory location should be:  
11. Set the WR bit. This will begin the write cycle.  
12. The CPU will stall for duration of the write (about  
2 ms using internal timer).  
1. Read 64 bytes into RAM.  
2. Update data values in RAM as necessary.  
13. Re-enable interrupts.  
3. Load Table Pointer register with address being  
erased.  
14. Repeat steps 6-14 seven times to write 64 bytes.  
15. Verify the memory (table read).  
4. Do the row erase procedure.  
5. Load Table Pointer register with address of first  
byte being written.  
This procedure will require about 18 ms to update one  
row of 64 bytes of memory. An example of the required  
code is given in Example 5-3.  
6. Write the first 8 bytes into the holding registers  
with auto-increment.  
Note:  
Before setting the WR bit, the Table  
Pointer address needs to be within the  
intended address range of the eight bytes  
in the holding register.  
7. Set the EECON1 register for the write operation:  
• set EEPGD bit to point to program memory;  
• clear the CFGS bit to access program memory;  
• set WREN to enable byte writes.  
2005 Microchip Technology Inc.  
DS39612B-page 67  
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