PIC18F2331/2431/4331/4431
8.4.1
FLASH PROGRAM MEMORY
ERASE SEQUENCE
8.4
Erasing Flash Program Memory
The minimum erase block is 32 words or 64 bytes.
Larger blocks of program memory can be bulk erased
only through the use of an external programmer or
ICSP control. Word erase in the Flash array is not
supported.
The sequence of events for erasing a block of internal
program memory location is:
1. Load the Table Pointer with the address of the
row being erased.
When initiating an erase sequence from the micro-
controller itself, a block of 64 bytes of program memory
is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased;
TBLPTR<5:0> are ignored.
2. Set the EECON1 register for the erase
operation:
- set the EEPGD bit to point to program memory;
- clear the CFGS bit to access program memory;
- set the WREN bit to enable writes;
- set the FREE bit to enable the erase.
3. Disable interrupts.
The EECON1 register commands the erase operation.
The EEPGD bit (EECON1<7>) must be set to point to
the Flash program memory. The WREN bit
(EECON1<2>) must be set to enable write operations.
The FREE bit (EECON1<4>) is set to select an erase
operation.
4. Write 55h to EECON2.
5. Write 0AAh to EECON2.
6. Set the WR bit. This will begin the row erase
cycle.
For protection, the write initiate sequence using
EECON2 must be used.
7. The CPU will stall for the duration of the erase
(about 2 ms using internal timer).
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
8. Execute a NOP.
9. Re-enable interrupts.
EXAMPLE 8-2:
ERASING A FLASH PROGRAM MEMORY ROW
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
; load TBLPTR with the base
; address of the memory block
ERASE_ROW
BSF
BCF
BSF
BSF
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON2, WR
; point to Flash program memory
; access Flash program memory
; enable write to memory
; enable Row Erase operation
; disable interrupts
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
; write 55H
Required
Sequence
; write 0AAH
; start erase (CPU stall)
NOP
BSF
INTCON, GIE
; re-enable interrupts
DS39616D-page 90
2010 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
