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PIC16F688-I/ST 参数 Datasheet PDF下载

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型号: PIC16F688-I/ST
PDF下载: 下载PDF文件 查看货源
内容描述: 14引脚基于闪存的8位CMOS微控制器采用纳瓦技术 [14-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器
文件页数/大小: 202 页 / 3832 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F688  
TABLE 14-2: OSCILLATOR PARAMETERS  
Standard Operating Conditions (unless otherwise stated)  
Operating Temperature  
-40°C TA +125°C  
Param  
Sym  
No.  
Freq  
Tolerance  
Characteristic  
Min  
Typ†  
Max  
Units  
TOSC Slowest clock  
ms LFINTOSC/64  
Conditions  
OS06  
OS07  
OS08  
TWARM  
Internal Oscillator Switch  
2
(3)  
when running  
TSC  
Fail-Safe Sample Clock  
21  
(1)  
Period  
HFOSC  
Internal Calibrated  
HFINTOSC Frequency  
1%  
2%  
7.92  
7.84  
8.0  
8.0  
8.08  
8.16  
MHz VDD = 3.5V, 25°C  
(2)  
MHz 2.5V VDD 5.5V,  
0°C TA +85°C  
5%  
7.60  
15  
8.0  
31  
8.40  
45  
MHz 2.0V VDD 5.5V,  
-40°C TA +85°C (Ind.),  
-40°C TA +125°C (Ext.)  
OS09*  
OS10*  
LFOSC  
Internal Uncalibrated  
LFINTOSC Frequency  
kHz  
TIOSC  
ST  
HFINTOSC Oscillator  
Wake-up from Sleep  
Start-up Time  
5.5  
3.5  
3
12  
7
24  
14  
11  
μs  
μs  
μs  
VDD = 2.0V, -40°C to +85°C  
VDD = 3.0V, -40°C to +85°C  
VDD = 5.0V, -40°C to +85°C  
6
*
These parameters are characterized but not tested.  
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only  
and are not tested.  
Note 1: Instruction cycle period (TCY) equals four times the input oscillator time base period. All specified values are  
based on characterization data for that particular oscillator type under standard operating conditions with the  
device executing code. Exceeding these specified limits may result in an unstable oscillator operation and/or  
higher than expected current consumption. All devices are tested to operate at “min” values with an external  
clock applied to the OSC1 pin. When an external clock input is used, the “max” cycle time limit is “DC” (no clock)  
for all devices.  
2: To ensure these oscillator frequency tolerances, VDD and VSS must be capacitively decoupled as close to the  
device as possible. 0.1 μF and 0.01 μF values in parallel are recommended.  
3: By design.  
DS41203D-page 154  
© 2007 Microchip Technology Inc.  
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