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PIC16F505-I/SL 参数 Datasheet PDF下载

PIC16F505-I/SL图片预览
型号: PIC16F505-I/SL
PDF下载: 下载PDF文件 查看货源
内容描述: 8月14日引脚, 8位闪存微控制器 [8/14-Pin, 8-Bit Flash Microcontrollers]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 100 页 / 1278 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC12F508/509/16F505  
10.1 DC Characteristics: PIC12F508/509/16F505 (Industrial)  
Standard Operating Conditions (unless otherwise specified)  
Operating Temperature -40°C TA +85°C (industrial)  
DC CHARACTERISTICS  
Param  
Sym  
No.  
Characteristic  
Min Typ(1) Max Units  
Conditions  
D001  
D002  
VDD  
VDR  
Supply Voltage  
RAM Data Retention Voltage(2)  
2.0  
5.5  
V
V
V
See Figure 10-1  
1.5*  
VSS  
Device in Sleep mode  
D003 VPOR VDD Start Voltage to ensure  
See Section 7.4 "DC Characteris-  
tics" for details  
Power-on Reset  
D004 SVDD VDD Rise Rate to ensure  
0.05  
*
V/ms See Section 7.4 "DC Characteris-  
tics" for details  
Power-on Reset  
D010  
IDD  
Supply Current(3)  
170  
0.4  
1.7  
15  
TBD  
TBD  
TBD  
TBD  
μA  
mA  
mA  
μA  
FOSC = 4 MHz, VDD = 2.0V(4)  
FOSC = 10 MHz, VDD = 3.0V  
FOSC = 20 MHz, VDD = 5.0V  
FOSC = 32 kHz, VDD = 2.0V, WDT  
disabled  
D020  
IPD  
Power-down Current(5)  
0.1  
1.0  
TBD  
TBD  
μA  
μA  
VDD = 2.0V  
VDD = 2.0V  
D022 ΔIWDT WDT Current(5)  
Legend: TBD = To Be Determined.  
*
These parameters are characterized but not tested.  
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design  
guidance only and is not tested.  
2: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.  
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus  
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on  
the current consumption.  
a) The test conditions for all IDD measurements in active operation mode are:  
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VSS, T0CKI = VDD,  
MCLR = VDD; WDT enabled/disabled as specified.  
b) For standby current measurements, the conditions are the same, except that the device is in Sleep  
mode.  
4: Does not include current through REXT (in EXTRC mode only). The current through the resistor can be  
estimated by the formula:  
I = VDD/2REXT (mA) with REXT in kΩ.  
5: The Power-down current in Sleep mode does not depend on the oscillator type. Power-down current is  
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD or VSS.  
© 2007 Microchip Technology Inc.  
Preliminary  
DS41236C-page 69  
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