PIC16C745/765
16.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
Ambient temperature under bias.............................................................................................................-55°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
SS
(except V
DD
, MCLR and RA4)........................................... -0.3V to (V
DD
+ 0.3V)
Voltage on V
DD
with respect to V
SS
......................................................................................................... -0.3V to +7.5V
Voltage on MCLR with respect to V
SS
................................................................................................... -0.3V to +13.25V
Voltage on RA4 with respect to Vss ......................................................................................................... -0.3V to +10.5V
Total power dissipation
(Note 1)
...............................................................................................................................1.0W
Maximum current out of V
SS
pin ...........................................................................................................................300 mA
Maximum current into V
DD
pin ..............................................................................................................................250 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)......................................................................................................................
±20
mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
.............................................................................................................. ±20
mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB, and PORTE
(Note 2)
(combined) ...................................................200 mA
Maximum current sourced by PORTA, PORTB, and PORTE
(Note 2)
(combined) ..............................................200 mA
Maximum current sunk by PORTC and PORTD
(Note 2)
(combined) ..................................................................200 mA
Maximum current sourced by PORTC and PORTD
(Note 2)
(combined).............................................................200 mA
Note 1:
Power dissipation is calculated as follows: Pdis = V
DD
x {I
DD
-
∑
I
OH
} +
∑
{(V
DD
-V
OH
) x I
OH
} +
∑(V
O
l x I
OL
)
2:
PORTD and PORTE not available on the PIC16C745.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation list-
ings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
©
1999 Microchip Technology Inc.
Advanced Information
DS41124A-page 123
MICROCHIP [ MICROCHIP TECHNOLOGY ]
