PIC16C745/765
16.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (†)
Ambient temperature under bias.............................................................................................................-55°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to VSS (except VDD, MCLR and RA4)........................................... -0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +7.5V
Voltage on MCLR with respect to VSS ................................................................................................... -0.3V to +13.25V
Voltage on RA4 with respect to Vss......................................................................................................... -0.3V to +10.5V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of VSS pin ...........................................................................................................................300 mA
Maximum current into VDD pin ..............................................................................................................................250 mA
Input clamp current, IIK (VI < 0 or VI > VDD)...................................................................................................................... ±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD) .............................................................................................................. ±20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB, and PORTE (Note 2) (combined) ...................................................200 mA
Maximum current sourced by PORTA, PORTB, and PORTE (Note 2) (combined)..............................................200 mA
Maximum current sunk by PORTC and PORTD (Note 2) (combined)..................................................................200 mA
Maximum current sourced by PORTC and PORTD (Note 2) (combined).............................................................200 mA
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
2: PORTD and PORTE not available on the PIC16C745.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation list-
ings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
1999 Microchip Technology Inc.
Advanced Information
DS41124A-page 123
MICROCHIP [ MICROCHIP ]
