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PIC16F627-04I/SO 参数 Datasheet PDF下载

PIC16F627-04I/SO图片预览
型号: PIC16F627-04I/SO
PDF下载: 下载PDF文件 查看货源
内容描述: 基于闪存的8位CMOS微控制器 [FLASH-Based 8-Bit CMOS Microcontrollers]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 160 页 / 1657 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F62X  
17.2  
DC CHARACTERISTICS:  
PIC16LF62X-04 (Commercial, Industrial, Extended)  
Standard Operating Conditions (unless otherwise stated)  
Operating temperature –40°C TA +85°C for industrial and  
0°C TA +70°C for commercial and  
–40°C TA +125°C for extended  
Operating voltage VDD range as described in DC spec Table 17.1 and Table 12-2  
Param Sym  
No.  
Characteristic Min Typ† Max Units Conditions  
D001  
D002  
VDD  
VDR  
Supply Voltage  
2.0  
-
5.5  
V
RAM Data Retention  
Voltage (Note 1)  
1.5*  
V
Device in SLEEP mode  
D003  
D004  
VPOR  
SVDD  
VDD start voltage to  
ensure Power-on Reset  
VSS  
V
See section on Power-on Reset for  
details  
VDD rise rate to ensure  
Power-on Reset  
0.05*  
V/ms See section on Power-on Reset for  
details  
D005  
D010  
VBOD  
IDD  
Brown-out Detect Voltage  
Supply Current (Note 2, 5)  
3.7  
4.0  
4.3  
0.6  
V
BODEN configuration bit is cleared  
mA FOSC = 4.0 MHZ, VDD = 2.5  
D013  
4.0  
7.0  
6.0  
2.0  
mA FOSC = 20.0 MHz, VDD = 5.5  
mA FOSC = 20.0 MHz, VDD = 4.5  
mA FOSC = 10.0 MHz, VDD = 3.0  
D020  
IPD  
Power Down Current (Note 2)  
2.0  
2.2  
5.0  
9.0  
15.0  
µA  
µA  
µA  
µA  
µA  
VDD = 2.5  
VDD = 3.0  
VDD = 4.5  
VDD = 5.5  
VDD = 5.5 Extended  
IWDT  
IBOD  
ICOMP  
WDT Current (Note 4)  
6.0  
75  
15  
125  
µA  
µA  
VDD=3.0V  
BOD enabled, VDD = 5.0V  
D023  
1A  
Brown-out Detect Current (Note 4)  
Comparator Current for each  
Comparator (Note 4)  
30  
50  
135  
µA  
µA  
VDD = 3.0V  
VDD = 3.0V  
IVREF  
FOSC  
VREF Current (Note 4)  
LP Oscillator Operating Frequency  
INTRC Oscillator Operating Frequency  
XT Oscillator Operating Frequency  
HS Oscillator Operating Frequency  
0
0
0
200  
4
4
KHz All temperatures  
MHz All temperatures  
MHz All temperatures  
MHz All temperatures  
20  
*
These parameters are characterized but not tested.  
Data in "Typ" column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are not  
tested.  
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and  
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current consump-  
tion.  
The test conditions for all IDD measurements in active operation mode are:  
OSC1=external square wave, from rail to rail; all I/O pins tristated, pulled to VDD,  
MCLR = VDD; WDT enabled/disabled as specified.  
3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the  
part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD to VSS.  
4: The current is the additional current consumed when this peripheral is enabled. This current should be added to the base  
IDD or IPD measurement.  
5: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the for-  
mula Ir = VDD/2Rext (mA) with Rext in kΩ.  
1999 Microchip Technology Inc.  
Preliminary  
DS40300B-page 135