PIC12F629/675
12.7 DC Characteristics: PIC12F629/675-I (Industrial), PIC12F629/675-E (Extended)
(Cont.)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +±25°C for extended
DC CHARACTERISTICS
Param
Sym
No.
Characteristic
Min
Typ†
Max Units
Conditions
Capacitive Loading Specs
on Output Pins
D±00
D±0±
COSC2 OSC2 pin
—
—
—
—
±5*
50*
pF In XT, HS and LP modes when
external clock is used to drive
OSC±
CIO
All I/O pins
pF
Data EEPROM Memory
Byte Endurance
Byte Endurance
D±20
D±20A
D±2±
ED
ED
±00K
±0K
±M
±00K
—
—
—
E/W -40°C ≤ TA ≤ +85°C
E/W +85°C ≤ TA ≤ +±25°C
VDRW VDD for Read/Write
VMIN
5.5
V
Using EECON to read/write
VMIN = Minimum operating
voltage
D±22
D±23
TDEW Erase/Write cycle time
TRETD Characteristic Retention
—
5
6
ms
40
—
—
Year Provided no other specifications
are violated
D±24
TREF
Number of Total Erase/Write
(1)
Cycles before Refresh
±M
±0M
—
E/W -40°C ≤ TA ≤ +85°C
Program FLASH Memory
Cell Endurance
D±30
D±30A
D±3±
EP
±0K
±K
±00K
±0K
—
—
—
E/W -40°C ≤ TA ≤ +85°C
E/W +85°C ≤ TA ≤ +±25°C
ED
Cell Endurance
VPR
VDD for Read
VMIN
5.5
V
VMIN = Minimum operating
voltage
D±32
D±33
D±34
VPEW VDD for Erase/Write
TPEW Erase/Write cycle time
TRETD Characteristic Retention
4.5
—
—
2
5.5
2.5
—
V
ms
40
—
Year Provided no other specifications
are violated
*
These parameters are characterized but not tested.
Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
†
Note 1: See Section 8.5.± for additional information.
DS41190C-page 92
2003 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
