PIC12F629/675
12.3 DC Characteristics: PIC12F629/675-I (Industrial)
Standard Operating Conditions (unless otherwise stated)
-40°C ≤ TA ≤ +85°C for industrial
Operating temperature
Conditions
Param
No.
Device Characteristics
Min
Typ†
Max Units
VDD
Note
D020
Power-down Base Current
(IPD)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.99
±.2
2.9
0.3
±.8
8.4
58
700
770
995
±.5
3.5
±7
nA
nA
nA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
µA
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
WDT, BOD, Comparators, VREF,
and T±OSC disabled
(1)
D02±
WDT Current
(1)
D022
D023
70
BOD Current
±09
3.3
6.±
±±.5
58
±30
6.5
8.5
±6
(1)
Comparator Current
(1)
D024
D025
D026
70
CVREF Current
85
±00
±60
6.5
7.0
±0.5
775
±38
4.0
4.6
6.0
±.2
(1)
T± OSC Current
(1)
A/D Current
0.0022 ±.0
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral ∆ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD.
DS41190C-page 88
2003 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
