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PIC12C508A-04/P 参数 Datasheet PDF下载

PIC12C508A-04/P图片预览
型号: PIC12C508A-04/P
PDF下载: 下载PDF文件 查看货源
内容描述: 8引脚, 8位CMOS微控制器 [8-Pin, 8-Bit CMOS Microcontrollers]
分类和应用: 微控制器和处理器外围集成电路光电二极管PC可编程只读存储器时钟
文件页数/大小: 113 页 / 1604 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC12C5XX  
13.2  
DC CHARACTERISTICS:  
PIC12LC508A/509A (Commercial, Industrial)  
PIC12LCE518/519 (Commercial, Industrial)  
PIC12LCR509A (Commercial, Industrial)  
Standard Operating Conditions (unless otherwise specified)  
DC Characteristics  
Power Supply Pins  
Operating Temperature  
0°C TA +70°C (commercial)  
–40°C TA +85°C (industrial)  
Parm  
No.  
(1)  
Characteristic  
Supply Voltage  
Sym Min  
Max Units  
Conditions  
Typ  
D001  
VDD  
VDR  
2.5  
5.5  
V
V
FOSC = DC to 4 MHz (Commercial/  
Industrial)  
D002  
RAM Data Retention  
1.5*  
Device in SLEEP mode  
(2)  
Voltage  
D003  
D004  
VDD Start Voltage to ensure VPOR  
Power-on Reset  
VSS  
V
See section on Power-on Reset for details  
VDD Rise Rate to ensure  
Power-on Reset  
SVDD 0.05*  
V/ms See section on Power-on Reset for details  
(3)  
D010  
IDD  
0.4  
0.4  
15  
0.8  
0.8  
23  
mA XT and EXTRC options (Note 4)  
FOSC = 4 MHz, VDD = 2.5V  
mA INTRC Option  
Supply Current  
D010C  
D010A  
FOSC = 4 MHz, VDD = 2.5V  
µA  
µA  
LP OPTION, Commercial Temperature  
FOSC = 32 kHz, VDD = 2.5V, WDT disabled  
LP OPTION, Industrial Temperature  
15  
31  
FOSC = 32 kHz, VDD = 2.5V, WDT disabled  
(5)  
D020  
D021  
D021B  
IPD  
Power-Down Current  
0.2  
0.2  
3
4
µA  
µA  
VDD = 2.5V, Commercial  
VDD = 2.5V, Industrial  
IWDT  
2.0  
2.0  
4
5
mA VDD = 2.5V, Commercial  
mA VDD = 2.5V, Industrial  
* These parameters are characterized but not tested.  
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design  
guidance only and is not tested.  
2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.  
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as  
bus loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an  
impact on the current consumption.  
a) The test conditions for all IDD measurements in active operation mode are:  
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to  
Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.  
b) For standby current measurements, the conditions are the same, except that  
the device is in SLEEP mode.  
4: Does not include current through Rext. The current through the resistor can be estimated by the  
formula: IR = VDD/2Rext (mA) with Rext in kOhm.  
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current  
is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or  
VSS.  
1999 Microchip Technology Inc.  
DS40139E-page 81  
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