PIC12C5XX
13.1
DC CHARACTERISTICS:
PIC12C508A/509A (Commercial, Industrial, Extended)
PIC12CE518/519 (Commercial, Industrial, Extended)
PIC12CR509A (Commercial, Industrial, Extended)
Standard Operating Conditions (unless otherwise specified)
DC Characteristics
Power Supply Pins
Operating Temperature
0°C ≤ TA ≤ +70°C (commercial)
–40°C ≤ TA ≤ +85°C (industrial)
–40°C ≤ TA ≤ +125°C (extended)
Parm
No.
(1)
Characteristic
Sym
Min
Max
Units
Conditions
Typ
D001
Supply Voltage
VDD
3.0
5.5
V
V
FOSC = DC to 4 MHz (Commercial/
Industrial, Extended)
D002
RAM Data Retention
VDR
1.5*
Device in SLEEP mode
(2)
Voltage
D003
D004
VDD Start Voltage to ensure VPOR
Power-on Reset
VSS
V
See section on Power-on Reset for details
VDD Rise Rate to ensure
Power-on Reset
SVDD 0.05*
V/ms See section on Power-on Reset for details
(3)
D010
IDD
—
—
—
—
—
0.8
0.8
19
1.4
1.4
27
mA
mA
µA
µA
µA
XT and EXTRC options (Note 4)
FOSC = 4 MHz, VDD = 5.5V
INTRC Option
Supply Current
D010C
D010A
FOSC = 4 MHz, VDD = 5.5V
LP OPTION, Commercial Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
LP OPTION, Industrial Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
LP OPTION, Extended Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
19
30
35
55
(5)
D020
D021
D021B
IPD
—
—
—
0.25
0.25
2
4
5
12
µA
µA
µA
VDD = 3.0V, Commercial WDT disabled
VDD = 3.0V, Industrial WDT disabled
VDD = 3.0V, Extended WDT disabled
Power-Down Current
D022
∆IWDT
∆IEE
—
—
—
2.2
2.2
4
5
6
11
µA
µA
µA
VDD = 3.0V, Commercial
VDD = 3.0V, Industrial
VDD = 3.0V, Extended
Power-Down Current
(3)
—
0.1
0.2
mA
FOSC = 4 MHz, Vdd = 5.5V,
SCL = 400kHz
Supply Current
During read/write to
EEPROM peripheral
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guid-
ance only and is not tested.
2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on the
current consumption.
a) The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: IR = VDD/2Rext (mA) with Rext in kOhm.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is mea-
sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
DS40139E-page 80
1999 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
