MCP6H91/2/4
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +3.5V to +12V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2 - 1.4V, V
OUT
V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 kto V
L
. (Refer to
Figure 1-1).
Parameters
Output
High-Level Output Voltage
V
OH
3.490
4.985
11.970
Low-Level Output Voltage
V
OL
—
—
—
Output Short-Circuit Current
I
SC
—
—
—
Power Supply
Supply Voltage
Quiescent Current per Amplifier
V
DD
I
Q
3.5
±1.75
—
—
—
2
12
±6
2.8
V
V
mA
Single-Supply operation
Dual-Supply operation
I
O
= 0, V
CM
= V
DD
/4
3.495
4.993
11.980
0.005
0.007
0.020
±35
±41
±41
—
—
—
0.010
0.015
0.030
—
—
—
V
V
V
V
V
V
mA
mA
mA
V
DD
= 3.5V
0.5V input overdrive
V
DD
= 5V
0.5V input overdrive
V
DD
= 12V
0.5V input overdrive
V
DD
= 3.5V
0.5 V input overdrive
V
DD
= 5V
0.5 V input overdrive
V
DD
= 12V
0.5 V input overdrive
V
DD
= 3.5V
V
DD
= 5V
V
DD
= 12V
Sym.
Min.
Typ.
Max.
Units
Conditions
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +3.5V to +12V, V
SS
= GND,
V
CM
= V
DD
/2 - 1.4V, V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kto V
L
and C
L
= 60 pF. (Refer to
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
E
ni
i
ni
—
—
—
—
10
23
12
1.9
—
—
—
—
µVp-p
nV/Hz
nV/Hz
fA/Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
10
60
10
—
—
—
MHz
°C
V/µs
G = +1V/V
Sym.
Min.
Typ.
Max.
Units
Conditions
DS25138B-page 4
2012 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
