MCP6H91/2/4
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
.......................................................................13.2V
Current at Input Pins......................................................±2 mA
Analog Inputs (V
IN
+, V
IN
-)††.............V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ............V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage..........................................V
DD
– V
SS
Output Short-Circuit Current...................................continuous
Current at Output and Supply Pins ..............................±65 mA
Storage Temperature.....................................-65°C to +150°C
Maximum Junction Temperature (T
J
)...........................+150°C
ESD protection on all pins (HBM; MM) 2 kV; 200V
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
††
See
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +3.5V to +12V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2 - 1.4V, V
OUT
V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 kto V
L
. (Refer to
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
I
B
—
—
—
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage Range
Common Mode Rejection Ratio
V
CMR
CMRR
V
SS
– 0.3
75
80
80
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
A
OL
95
115
—
dB
0.2V < V
OUT
<(V
DD
– 0.2V)
—
91
97
98
V
DD
– 2.5
—
—
—
V
dB
dB
dB
V
CM
= -0.3V to 1.0V,
V
DD
= 3.5V
V
CM
= -0.3V to 2.5V,
V
DD
= 5V
V
CM
= -0.3V to 9.5V,
V
DD
= 12V
I
OS
Z
CM
Z
DIFF
—
—
—
10
400
9
±1
10
13
||6
10
13
||6
—
—
25
—
—
—
pA
pA
nA
pA
||pF
||pF
T
A
= +85°C
T
A
= +125°C
V
OS
V
OS
/T
A
PSRR
-4
—
75
±1
±2.5
94
+4
—
—
mV
µV/°C T
A
= -40°C to +125°C
dB
Sym.
Min.
Typ.
Max.
Units
Conditions
2012 Microchip Technology Inc.
DS25138B-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
