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MCP617-I/SN 参数 Datasheet PDF下载

MCP617-I/SN图片预览
型号: MCP617-I/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 2.3V至5.5V微功耗双CMOS运算放大器 [2.3V to 5.5V Micropower Bi-CMOS Op Amps]
分类和应用: 运算放大器放大器电路光电二极管信息通信管理PC
文件页数/大小: 38 页 / 637 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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MCP616/7/8/9
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
Sym
T
A
T
A
T
A
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
Min
-40
-40
-65
Typ
211
89.3
149.5
70
95.3
100
Max
+85
+125
+150
Units
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Conditions
The MCP616/7/8/9 operate over this extended temperature range, but with reduced performance. In any case, the
Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
and
The bypass
capacitors are laid out according to the rules discussed
in
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
DD
/2 R
G
R
F
V
L
R
L
V
IN
MCP61X
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
IN
R
G
R
F
V
L
R
L
V
DD
/2
MCP61X
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
©
2008 Microchip Technology Inc.
DS21613C-page 5