MCP616/7/8/9
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Sym
GBWP
PM
SR
E
ni
e
ni
i
ni
Min
—
—
—
—
—
—
Typ
190
57
0.08
2.2
32
70
Max
—
—
—
—
—
—
Units
kHz
°
V/µs
µV
P-P
nV/√Hz
fA/√Hz
Conditions
G = +1V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
CS Hysteresis
Sym
Min
Typ
Max
Units
Conditions
V
IL
I
CSL
V
IH
I
CSH
I
SS
I
O(LEAK)
t
ON
t
OFF
V
HYST
V
SS
–1.0
—
0.01
0.2 V
DD
—
V
µA
CS = V
SS
0.8 V
DD
—
-2
—
—
0.01
-0.05
10
V
DD
2
—
—
V
µA
µA
nA
CS = V
DD
CS = V
DD
CS = V
DD
CS = 0.2V
DD
to V
OUT
= 0.9V
DD
/2,
G = +1 V/V, R
L
= 1 kΩ to V
SS
CS = 0.8V
DD
to V
OUT
= 0.1V
DD
/2,
G = +1 V/V, R
L
= 1 kΩ to V
SS
V
DD
= 5.0V
—
—
—
9
0.1
0.6
100
—
—
µs
µs
V
CS
t
ON
V
OUT
I
SS
I
CS
High-Z
-50 nA
(typical)
10 nA
(typical)
V
IL
V
IH
t
OFF
High-Z
-19 µA
(typical)
-50 nA
(typical)
10 nA
(typical)
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP618.
DS21613C-page 4
©
2008 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
