MCP6141/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, R
L
= 1 MΩ to V
DD
/2, and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
Sym.
GBWP
SR
PM
E
ni
e
ni
i
ni
Min.
—
—
—
—
—
—
Typ.
100
24
60
5.0
170
0.6
Max.
—
—
—
—
—
—
Units
kHz
V/ms
°
G = +10
Conditions
μ
V
P-P
f = 0.1 Hz to 10 Hz
nV/√Hz f = 1 kHz
fA/√Hz f = 1 kHz
MCP6143 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, R
L
= 1 MΩ to V
DD
/2, and C
L
= 60 pF.
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
Hysteresis
Sym.
Min.
Typ.
Max.
Units
Conditions
V
IL
I
CSL
V
SS
—
—
5
V
SS
+0.3
—
V
pA
CS = V
SS
V
IH
I
CSH
I
SS
I
OLEAK
V
DD
–0.3
—
—
—
—
5
-20
20
V
DD
—
—
—
V
pA
pA
pA
CS = V
DD
CS = V
DD
CS = V
DD
t
ON
t
OFF
V
HYST
—
—
—
2
10
0.6
50
—
—
ms
G = +1V/V, CS = 0.3V to
V
OUT
= 0.9V
DD
/2
G = +1V/V, CS = V
DD
–0.3V to
V
OUT
= 0.1V
DD
/2
V
DD
= 5.0V
μ
s
V
CS
V
IL
t
ON
V
IH
t
OFF
High-Z
V
OUT
High-Z
-0.6
μA
(typ.)
I
SS
-20 pA (typ.)
I
CS
5 pA (typ.)
-20 pA (typ.)
5 pA (typ.)
FIGURE 1-1:
Chip Select (CS) Timing
Diagram (MCP6143 only).
©
2005 Microchip Technology Inc.
DS21668B-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
