MCP6141/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V = +1.4V to +5.5V, V = GND, T = 25°C, V
= V /2,
DD
DD
SS
A
CM
V
≈ V /2, R = 1 MΩ to V /2, and C = 60 pF.
OUT
DD
L
DD
L
Parameters
Sym. Min.
Typ. Max. Units
Conditions
AC Response
Gain Bandwidth Product
Slew Rate
GBWP
SR
—
—
—
100
24
—
—
—
kHz
V/ms
°
Phase Margin
PM
60
G = +10
Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
E
—
—
—
5.0
170
0.6
—
—
—
μV
f = 0.1 Hz to 10 Hz
ni
P-P
e
nV/√Hz f = 1 kHz
ni
i
fA/√Hz f = 1 kHz
ni
MCP6143 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V = +1.4V to +5.5V, V = GND, T = 25°C, V
= V /2,
DD
DD
SS
A
CM
V
≈ V /2, R = 1 MΩ to V /2, and C = 60 pF.
OUT
DD
L
DD
L
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
V
V
—
5
V +0.3
SS
V
IL
SS
I
—
—
pA
CS = V
CSL
SS
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
V
V
–0.3
—
5
V
V
IH
DD
DD
I
—
—
pA
pA
pA
CS = V
CS = V
CS = V
CSH
DD
DD
DD
I
—
—
-20
20
—
—
SS
Amplifier Output Leakage, CS High
Dynamic Specifications
I
OLEAK
CS Low to Amplifier Output Turn-on Time
t
—
2
50
ms
G = +1V/V, CS = 0.3V to
= 0.9V /2
ON
V
OUT
DD
CS High to Amplifier Output High-Z
Hysteresis
t
—
—
10
—
—
μs
G = +1V/V, CS = V –0.3V to
DD
OFF
V
= 0.1V /2
OUT
DD
V
0.6
V
V
= 5.0V
DD
HYST
VIL
CS
VIH
tOFF
High-Z
tON
VOUT
High-Z
ISS -20 pA (typ.)
-0.6 μA (typ.)
-20 pA (typ.)
5 pA (typ.)
5 pA (typ.)
ICS
FIGURE 1-1:
Chip Select (CS) Timing
Diagram (MCP6143 only).
© 2005 Microchip Technology Inc.
DS21668B-page 3
MICROCHIP [ MICROCHIP ]
