MCP6031/2/3/4
MCP6033 CHIP SELECT ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, V
SS
=GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
= V
DD
/2, V
L
= V
DD
/2, C
L
= 60 pF, R
L
= 1 MΩ to V
L
and CS is tied low (Refer to
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output
Turn-on Time
CS High to Amplifier Output
High-Z
CS Hysteresis
t
ON
—
4
100
ms
CS
≤
0.2V
DD
to V
OUT
= 0.9V
DD
/2,
G = +1 V/V, V
IN
= V
DD
/2,
R
L
= 50 kΩ to V
L
= V
SS.
CS
≥
0.8V
DD
to V
OUT
= 0.1V
DD
/2,
G = +1 V/V, V
IN
= V
DD
/2,
R
L
= 50 kΩ to V
L
= V
SS.
V
IH
I
CSH
I
SS
I
O(LEAK)
0.8V
DD
—
—
—
10
-400
10
V
DD
—
—
—
V
pA
pA
pA
CS = V
DD
CS = V
DD
CS = V
DD
V
IL
I
CSL
V
SS
—
—
-10
0.2V
DD
—
V
pA
CS = V
SS
Sym
Min
Typ
Max
Units
Conditions
t
OFF
—
10
—
µs
V
HYST
—
0.3V
DD
—
V
CS
t
ON
V
OUT
High-Z
V
IL
V
IH
t
OFF
High-Z
-0.9 µA
(typical)
I
SS
-400 pA
(typical)
I
CS
10 pA
(typical)
-400 pA
(typical)
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP6033.
DS22041B-page 4
©
2008 Microchip Technology Inc.