MCP6031/2/3/4
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND.
Parameters
Temperature Ranges
Sym
Min
Typ
Max
Units
Conditions
Operating Temperature Range
Storage Temperature Range
TA
TA
-40
-65
—
—
+125
+150
°C
°C
Note
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-DFN (2x3)
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
θJA
θJA
θJA
θJA
θJA
θJA
—
—
—
—
—
—
256
84
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
163
206
120
100
Note:
The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-3. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
VDD
2.2 µF
VIN
0.1 µF
MCP603X
VOUT
RL
RN
CL
VDD/2
VL
RG
RF
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
VDD
2.2 µF
VDD/2
0.1 µF
MCP603X
VOUT
RL
RN
CL
VIN
VL
RG
FIGURE 1-3:
RF
AC and DC Test Circuit for
Most Inverting Gain Conditions.
© 2008 Microchip Technology Inc.
DS22041B-page 5
MICROCHIP [ MICROCHIP ]
