MCP41XXX/42XXX
DC CHARACTERISTICS: 100 kΩ VERSION
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.7V to 5.5V, T
A
= -40°C to +85°C (TSSOP devices are only specified at +25°C and
+85°C). Typical specifications represent values for V
DD
= 5V, V
SS
= 0V, V
B
= 0V, T
A
= +25°C.
Parameters
Rheostat Mode
Nominal Resistance
Rheostat Differential Non-Linearity
Rheostat Integral Non-Linearity
Rheostat Tempco
Wiper Resistance
Wiper Current
Nominal Resistance Match
Potentiometer Divider
Resolution
Monotonicity
Differential Non-Linearity
Integral Non-Linearity
Voltage Divider Tempco
Full-Scale Error
Zero-Scale Error
Resistor Terminals
Voltage Range
Capacitance (C
A
or C
B
)
Capacitance
Bandwidth -3dB
Settling Time
Resistor Noise Voltage
Crosstalk
Schmitt Trigger High-Level Input Voltage
Schmitt Trigger Low-Level Input Voltage
Hysteresis of Schmitt Trigger Inputs
Low-Level Output Voltage
High-Level Output Voltage
Input Leakage Current
Pin Capacitance (All inputs/outputs)
Power Requirements
Operating Voltage Range
Supply Current, Active
Supply Current, Static
Power Supply Sensitivity
Note
1:
2:
3:
4:
5:
6:
V
DD
I
DDA
I
DDS
PSS
PSS
2.7
—
—
—
—
—
340
0.01
0.0015
0.0015
5.5
500
1
0.0035
0.0035
V
µA
µA
%/%
%/%
V
DD
= 5.5V, CS = V
SS
, f
SCK
= 10 MHz,
SO = Open, Code FFh
CS, SHDN, RS = V
DD
= 5.5V, SO = Open
V
DD
= 4.5V - 5.5V, V
A
= 4.5V, Code 80h
V
DD
= 2.7V - 3.3V, V
A
= 2.7V, Code 80h
C
W
BW
t
S
e
NWB
C
T
V
IH
V
IL
V
HYS
V
OL
V
OH
I
LI
C
IN
, C
OUT
V
A,B,W
0
—
—
—
—
—
—
0.7V
DD
—
—
—
V
DD
- 0.5
-1
—
—
11
5.6
145
18
29
-95
—
—
0.05V
DD
—
—
—
10
V
DD
—
—
—
—
—
—
—
0.3V
DD
—
0.40
—
+1
—
V
V
µA
pF
I
OL
= 2.1 mA, V
DD
= 5V
I
OH
= -400 µA, V
DD
= 5V
CS = V
DD
, V
IN
= V
SS
or V
DD
, includes V
A
SHDN=0
V
DD
= 5.0V, T
A
= +25°C, f
c
= 1 MHz
pF
pF
MHz
µS
nV/√Hz
dB
V
V
f =1 MHz, Code = 80h, see Figure 2-30
f =1 MHz, Code = 80h, see Figure 2-30
V
B
= 0V, Measured at Code 80h,
Output Load = 30
P
F
V
A
= V
DD
,V
B
= 0V, ±1% Error Band, Transition
from Code 00h to Code 80h, Output Load = 30 pF
V
A
= Open, Code 80h, f =1 kHz
V
A
= V
DD
, V
B
= 0V
N
N
DNL
INL
∆V
W
/∆T
V
WFSE
V
WFSE
V
WZSE
V
WZSE
8
8
-1
-1
—
-1
-1
0
0
—
—
±1/4
±1/4
1
-0.25
-0.35
+0.25
+0.35
—
—
+1
+1
—
0
0
+1
+1
Bits
Bits
LSB
LSB
LSB
LSB
LSB
LSB
Code FFh, V
DD
= 5V, see Figure 2-25
Code FFh, V
DD
= 3V, see Figure 2-25
Code 00h, V
DD
= 5V, see Figure 2-25
Code 00h, V
DD
= 3V, see Figure 2-25
R
R-DNL
R-INL
∆R
AB
/∆T
R
W
R
W
I
W
∆R/R
70
-1
-1
—
—
—
-1
—
100
±1/4
±1/4
800
125
175
—
0.2
130
+1
+1
—
175
250
+1
1
kΩ
LSB
LSB
ppm/°C
Ω
Ω
mA
%
MCP42010 only, P0 to P1;T
A
= +25°C
V
DD
= 5.5V, I
W
= 1 mA, code 00h
V
DD
= 2.7V, I
W
= 1 mA, code 00h
T
A
= +25°C
Sym
Min
Typ
Max
Units
Conditions
ppm/°C Code 80h
Dynamic Characteristics (All dynamic characteristics use V
DD
= 5V.)
Digital Inputs/Outputs (CS, SCK, SI, SO) See Figure 2-12 for RS and SHDN pin operation.
V
AB
= V
DD
, no connection on wiper.
Rheostat position non-linearity R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum
resistance wiper positions. R-DNL measures the relative step change from the ideal between successive tap positions. I
W
= 50 µA for
V
DD
= 3V and I
W
= 400 µA for V
DD
= 5V for 10 kΩ version. See Figure 2-26 for test circuit.
INL and DNL are measured at V
W
with the device configured in the voltage divider or potentiometer mode. V
A
= V
DD
and V
B
= 0V. DNL
specification limits of ±1 LSB max are specified monotonic operating conditions. See Figure 2-25 for test circuit.
Resistor terminals A,B and W have no restrictions on polarity with respect to each other. Full-scale and zero-scale error were measured
using Figure 2-25.
Measured at V
W
pin where the voltage on the adjacent V
W
pin is swinging full-scale.
Supply current is independent of current through the potentiometers.
DS11195C-page 4
2003 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
