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DSPIC33FJ128GP306 参数 Datasheet PDF下载

DSPIC33FJ128GP306图片预览
型号: DSPIC33FJ128GP306
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存编程规范 [Flash Programming Specification]
分类和应用: 闪存
文件页数/大小: 80 页 / 943 K
品牌: MICROCHIP [ MICROCHIP ]
 浏览型号DSPIC33FJ128GP306的Datasheet PDF文件第65页浏览型号DSPIC33FJ128GP306的Datasheet PDF文件第66页浏览型号DSPIC33FJ128GP306的Datasheet PDF文件第67页浏览型号DSPIC33FJ128GP306的Datasheet PDF文件第68页浏览型号DSPIC33FJ128GP306的Datasheet PDF文件第70页浏览型号DSPIC33FJ128GP306的Datasheet PDF文件第71页浏览型号DSPIC33FJ128GP306的Datasheet PDF文件第72页浏览型号DSPIC33FJ128GP306的Datasheet PDF文件第73页  
dsPIC33F/PIC24H PROGRAMMING SPECIFICATION  
TABLE 6-1:  
PROGRAMMING THE PROGRAMMING EXECUTIVE (CONTINUED)  
Command  
(Binary)  
Data  
(Hex)  
Description  
Step 7: Load W0:W5 with the next 4 words of packed programming executive code and initialize W6 for  
programming. Programming starts from the base of executive memory (0x800000) using W6 as a read  
pointer and W7 as a write pointer.  
0000  
0000  
0000  
0000  
0000  
0000  
2<LSW0>0  
2<MSB1:MSB0>1 MOV  
2<LSW1>2  
2<LSW2>3  
2<MSB3:MSB2>4 MOV  
2<LSW3>5 MOV  
MOV  
#<LSW0>, W0  
#<MSB1:MSB0>, W1  
#<LSW1>, W2  
#<LSW2>, W3  
#<MSB3:MSB2>, W4  
#<LSW3>, W5  
MOV  
MOV  
Step 8: Set the read pointer (W6) and load the (next four write) latches.  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
0000  
EB0300  
000000  
BB0BB6  
000000  
000000  
BBDBB6  
000000  
000000  
BBEBB6  
000000  
000000  
BB1BB6  
000000  
000000  
BB0BB6  
000000  
000000  
BBDBB6  
000000  
000000  
BBEBB6  
000000  
000000  
BB1BB6  
000000  
000000  
CLR  
NOP  
W6  
TBLWTL [W6++], [W7]  
NOP  
NOP  
TBLWTH.B[W6++], [W7++]  
NOP  
NOP  
TBLWTH.B[W6++], [++W7]  
NOP  
NOP  
TBLWTL [W6++], [W7++]  
NOP  
NOP  
TBLWTL [W6++], [W7]  
NOP  
NOP  
TBLWTH.B[W6++], [W7++]  
NOP  
NOP  
TBLWTH.B[W6++], [++W7]  
NOP  
NOP  
TBLWTL [W6++], [W7++]  
NOP  
NOP  
Step 9: Repeat Steps 7-8 sixteen times to load the write latches for the 64 instructions.  
Step 10: Initiate the programming cycle.  
0000  
0000  
0000  
A8E761  
000000  
000000  
BSET  
NOP  
NOP  
NVMCON, #15  
Step 11: Wait for the Row Program operation to complete.  
-
-
Externally time ‘P13’ msec (see Section TABLE 8-1: “AC/DC  
Characteristics and Timing Requirements”) to allow suffi-  
cient time for the Page Erase operation to complete.  
0000  
0000  
0000  
0001  
807600  
887840  
000000  
<VISI>  
MOV  
MOV  
NOP  
NVMCON, W0  
W0, VISI  
Clock out contents of VISI register. Repeat until the WR bit  
is clear.  
© 2007 Microchip Technology Inc.  
Preliminary  
DS70152D-page 69  
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