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ATMEGA16M1-15MZ 参数 Datasheet PDF下载

ATMEGA16M1-15MZ图片预览
型号: ATMEGA16M1-15MZ
PDF下载: 下载PDF文件 查看货源
内容描述: [IC MCU 8BIT 16KB FLASH 32QFN]
分类和应用: 微控制器
文件页数/大小: 318 页 / 7595 K
品牌: MICROCHIP [ MICROCHIP ]
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25.7 Serial Programming Pin Mapping  
Table 25-14. Pin Mapping Serial Programming  
Symbol  
MOSI_A  
MISO_A  
SCK_A  
Pins  
PD3  
PD2  
PD4  
I/O  
Description  
Serial data in  
Serial data out  
Serial clock  
I
O
I
25.8 Parallel Programming  
25.8.1 Enter Programming Mode  
The following algorithm puts the device in Parallel (High-voltage) > Programming mode:  
1. Set Prog_enable pins listed in Table 25-9 on page 260 to “0000”, RESET pin to “0” and VCC to 0V.  
2. Apply 4.5 to 5.5V between VCC and GND. Ensure that VCC reaches at least 1.8V within the next 20µs.  
3. Wait 20 to 60µs, and apply 11.5 to 12.5V to RESET.  
4. Keep the Prog_enable pins unchanged for at least 10µs after the high-voltage has been applied to ensure the  
Prog_enable signature has been latched.  
5. Wait at least 300µs before giving any parallel programming commands.  
6. Exit programming mode by power the device down or by bringing RESET pin to 0V.  
If the rise time of the VCC is unable to fulfill the requirements listed above, the following alternative algorithm can be used.  
1. Set Prog_enable pins listed in Table 25-9 on page 260 to “0000”, RESET pin to “0” and VCC to 0V.  
2. Apply 4.5 to 5.5V between VCC and GND.  
3. Monitor VCC, and as soon as VCC reaches 0.9 to 1.1V, apply 11.5 to 12.5V to RESET.  
4. Keep the Prog_enable pins unchanged for at least 10µs after the high-voltage has been applied to ensure the  
Prog_enable signature has been latched.  
5. Wait until VCC actually reaches 4.5 to 5.5V before giving any parallel programming commands.  
6. Exit programming mode by power the device down or by bringing RESET pin to 0V.  
25.8.2 Considerations for Efficient Programming  
The loaded command and address are retained in the device during programming. For efficient programming, the following  
should be considered.  
The command needs only be loaded once when writing or reading multiple memory locations.  
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the EESAVE Fuse is  
programmed) and Flash after a Chip Erase.  
Address high byte needs only be loaded before programming or reading a new 256 word window in Flash or 256 byte  
EEPROM. This consideration also applies to signature bytes reading.  
ATmega16/32/64/M1/C1 [DATASHEET]  
261  
7647O–AVR–01/15  
 
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