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25LC1024-I/SM 参数 Datasheet PDF下载

25LC1024-I/SM图片预览
型号: 25LC1024-I/SM
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位的SPI总线串行EEPROM [1 Mbit SPI Bus Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 30 页 / 573 K
品牌: MICROCHIP [ MICROCHIP ]
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25AA1024/25LC1024  
2.8  
PAGE ERASE  
The Page Erase function will erase all bits (FFh) inside  
the given page. A Write Enable (WREN) instruction  
must be given prior to attempting a Page Erase. This  
is done by setting CS low and then clocking out the  
proper instruction into the 25XX1024. After all eight  
bits of the instruction are transmitted, the CS must be  
brought high to set the write enable latch.  
CS must then be driven high after the last bit if the  
address or the Page Erase will not execute. Once the  
CS is driven high, the self-timed Page Erase cycle is  
started. The WIP bit in the STATUS register can be  
read to determine when the Page Erase cycle is  
complete.  
If a Page Erase function is given to an address that  
has been protected by the Block Protect bits (BP0,  
BP1) then the sequence will be aborted and no erase  
will occur.  
The Page Erase function is entered by driving CS low,  
followed by the instruction code (Figure 2-8), and  
three address bytes. Any address inside the page to  
be erased is a valid address.  
FIGURE 2-8:  
PAGE ERASE SEQUENCE  
CS  
SCK  
SI  
0
1
2
3
4
5
6
7
8
9 10 11  
29 30 31  
Instruction  
24-bit Address  
23 22 21 20  
0
1
0
0
0
0
1
0
2
1
0
High-Impedance  
SO  
DS21836D-page 14  
Preliminary  
© 2007 Microchip Technology Inc.