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24LC65-I/SM 参数 Datasheet PDF下载

24LC65-I/SM图片预览
型号: 24LC65-I/SM
PDF下载: 下载PDF文件 查看货源
内容描述: 64K 1.8V I2C串行智能Ø EEPROM [64K 1.8V I2C Smart Serial O EEPROM]
分类和应用: 存储内存集成电路光电二极管PC可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 24 页 / 285 K
品牌: MICROCHIP [ MICROCHIP ]
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24AA65/24LC65/24C65  
FIGURE 8-2:  
CACHE WRITE TO THE ARRAY STARTING AT A PAGE BOUNDARY  
1
Write command initiated at byte 0 of page 3 in the array;  
First data byte is loaded into the cache byte 0.  
2 64 bytes of data are loaded into cache.  
cache page 0  
cache cache  
byte 0 byte 1  
cache cache page 1 cache page 2  
byte 7 bytes 8-15 bytes 16-23  
cache page 7  
bytes 56-63  
• • •  
• • •  
3
Write from cache into array initiated by STOP bit.  
Page 0 of cache written to page 3 of array.  
4
Remaining pages in cache are written  
to sequential pages in array.  
Write cycle is executed after every page is written.  
array row n  
page 0 page 1 page 2 byte 0 byte 1  
• • • byte 7 page 4 • • • page 7  
array row n + 1  
page 0 page 1 page 2  
page 3 page 4 • • • page 7  
5
Last page in cache written to page 2 in next row.  
FIGURE 8-3:  
CACHE WRITE TO THE ARRAY STARTING AT A NON-PAGE BOUNDARY  
1
Write command initiated; 64 bytes of data  
loaded into cache starting at byte 2 of page 0.  
2
Last 2 bytes loaded 'roll over'  
to beginning.  
3
Last 2 bytes  
loaded into  
cache cache cache  
byte 0 byte 1 byte 2  
cache cache page 1 cache page 2  
byte 7 bytes 8-15 bytes 16-23  
cache page 7  
bytes 56-63  
page 0 of cache.  
• • •  
• • •  
4
Write from cache into array initiated by STOP bit.  
Page 0 of cache written to page 3 of array.  
5
Remaining bytes in cache are  
written sequentially to array.  
Write cycle is executed after every page is written.  
array  
page 0 page 1 page 2  
page 0 page 1 page 2  
• • •  
page 4 • • • page 7  
page 4 • • • page 7  
byte 0 byte 1 byte 2 byte 3 byte 4  
page 3  
byte 7  
row n  
array  
row  
n + 1  
6
Last 3 pages in cache written to next row in array.  
2003 Microchip Technology Inc.  
DS21073J-page 13