MMF60R360P Datasheet
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter
Symbol
VDSS
Rating
600
±30
11
Unit
V
Note
Drain – Source voltage
Gate – Source voltage
VGSS
V
A
TC=25℃
Continuous drain current(1)
ID
6.95
33
A
TC=100℃
Pulsed drain current(2)
IDM
PD
A
Power dissipation
31
W
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Diode dv/dt ruggedness(3)
Storage temperature
EAS
dv/dt
dv/dt
Tstg
Tj
220
50
mJ
V/ns
V/ns
℃
15
-55 ~150
150
Maximum operating junction
temperature
℃
1) Id limited by maximum junction temperature
2) Pulse width tP limited by Tj,max
3) ISD ≤ ID, VDS peak ≤ V(BR)DSS
Thermal Characteristics
Parameter
Symbol
Rthjc
Value
4
Unit
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
℃/W
℃/W
Rthja
62.5
2
Nov. 2014 Revision 1.2
MagnaChip Semiconductor Ltd.
MGCHIP [ MagnaChip ]
