10
8
2500
2000
1500
1000
500
* Note : ID = -11A
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
6
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Coss
2
Crss
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
-Qg [nC]
-VDS [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
102
101
100
10-1
10-2
14
12
10
8
1 ms
10 ms
Operation in This Area
is Limited by R DS(on)
100 ms
1s
6
10s
DC
4
Single Pulse
2
Rθ =40 /W
℃
ja
Ta=25
℃
0
25
10-1
100
101
102
50
75
100
125
150
Ta [ ]
℃
-VDS [V]
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Ambient Temperature
101
100
10-1
10-2
D=0.5
0.2
0.1
* Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
0.05
JC
RΘ =40 /W
℃
JA
0.02
0.01
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [s]
Fig.11 Transient Thermal Response Curve
4
Jul 2011. Version 1.1
MagnaChip Semiconductor Ltd.
MGCHIP [ MagnaChip ]
